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Bismuth telluride-based material with high thermoelectric performance and preparation method thereof
The invention discloses a P-type bismuth telluride-based material and a preparation method thereof, and the general formula of the P-type bismuth telluride-based material is represented as Bi < 0.4 > Sb < 1.6-x > Yb < x > Te < 3, 0 lt >, x is smaller than or equal to 0.1, and the P-type bismuth telluride-based material is prepared by melting, ball-milling and sintering a Yb source, an Sb source, a Te source and a Bi source. The large atomic difference between Yb atoms and Sb atoms is utilized, a mass potential field is provided, the phonon scattering probability is enhanced, the lattice heat conductivity is reduced, and the thermoelectric performance of the P-type bismuth telluride-based material is enhanced through cooperation of the Yb atoms and the Sb atoms. The preparation method of the P-type bismuth telluride-based material provided by the invention is simple, the P-type bismuth telluride-based material with high thermoelectric performance can be obtained only by doping Yb in situ, and important technical guidance is provided in the aspect of bismuth telluride-based thermoelectric materials.
本发明公开了一种P型碲化铋基材料及其制备方法，所述P型碲化铋基材料的通式表示为：Bi0.4Sb1.6‑xYbxTe3，0
Bismuth telluride-based material with high thermoelectric performance and preparation method thereof
The invention discloses a P-type bismuth telluride-based material and a preparation method thereof, and the general formula of the P-type bismuth telluride-based material is represented as Bi < 0.4 > Sb < 1.6-x > Yb < x > Te < 3, 0 lt >, x is smaller than or equal to 0.1, and the P-type bismuth telluride-based material is prepared by melting, ball-milling and sintering a Yb source, an Sb source, a Te source and a Bi source. The large atomic difference between Yb atoms and Sb atoms is utilized, a mass potential field is provided, the phonon scattering probability is enhanced, the lattice heat conductivity is reduced, and the thermoelectric performance of the P-type bismuth telluride-based material is enhanced through cooperation of the Yb atoms and the Sb atoms. The preparation method of the P-type bismuth telluride-based material provided by the invention is simple, the P-type bismuth telluride-based material with high thermoelectric performance can be obtained only by doping Yb in situ, and important technical guidance is provided in the aspect of bismuth telluride-based thermoelectric materials.
本发明公开了一种P型碲化铋基材料及其制备方法，所述P型碲化铋基材料的通式表示为：Bi0.4Sb1.6‑xYbxTe3，0
Bismuth telluride-based material with high thermoelectric performance and preparation method thereof
一种高热电性能碲化铋基材料及其制备方法
HE HAILONG (Autor:in) / RONG MINGZHE (Autor:in) / XIONG TAO (Autor:in) / WU YI (Autor:in) / NIU CHUNPING (Autor:in)
23.06.2023
Patent
Elektronische Ressource
Chinesisch
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