A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Bismuth telluride-based material with high thermoelectric performance and preparation method thereof
The invention discloses a P-type bismuth telluride-based material and a preparation method thereof, and the general formula of the P-type bismuth telluride-based material is represented as Bi < 0.4 > Sb < 1.6-x > Yb < x > Te < 3, 0 lt >, x is smaller than or equal to 0.1, and the P-type bismuth telluride-based material is prepared by melting, ball-milling and sintering a Yb source, an Sb source, a Te source and a Bi source. The large atomic difference between Yb atoms and Sb atoms is utilized, a mass potential field is provided, the phonon scattering probability is enhanced, the lattice heat conductivity is reduced, and the thermoelectric performance of the P-type bismuth telluride-based material is enhanced through cooperation of the Yb atoms and the Sb atoms. The preparation method of the P-type bismuth telluride-based material provided by the invention is simple, the P-type bismuth telluride-based material with high thermoelectric performance can be obtained only by doping Yb in situ, and important technical guidance is provided in the aspect of bismuth telluride-based thermoelectric materials.
本发明公开了一种P型碲化铋基材料及其制备方法，所述P型碲化铋基材料的通式表示为：Bi0.4Sb1.6‑xYbxTe3，0
Bismuth telluride-based material with high thermoelectric performance and preparation method thereof
The invention discloses a P-type bismuth telluride-based material and a preparation method thereof, and the general formula of the P-type bismuth telluride-based material is represented as Bi < 0.4 > Sb < 1.6-x > Yb < x > Te < 3, 0 lt >, x is smaller than or equal to 0.1, and the P-type bismuth telluride-based material is prepared by melting, ball-milling and sintering a Yb source, an Sb source, a Te source and a Bi source. The large atomic difference between Yb atoms and Sb atoms is utilized, a mass potential field is provided, the phonon scattering probability is enhanced, the lattice heat conductivity is reduced, and the thermoelectric performance of the P-type bismuth telluride-based material is enhanced through cooperation of the Yb atoms and the Sb atoms. The preparation method of the P-type bismuth telluride-based material provided by the invention is simple, the P-type bismuth telluride-based material with high thermoelectric performance can be obtained only by doping Yb in situ, and important technical guidance is provided in the aspect of bismuth telluride-based thermoelectric materials.
本发明公开了一种P型碲化铋基材料及其制备方法，所述P型碲化铋基材料的通式表示为：Bi0.4Sb1.6‑xYbxTe3，0
Bismuth telluride-based material with high thermoelectric performance and preparation method thereof
一种高热电性能碲化铋基材料及其制备方法
HE HAILONG (author) / RONG MINGZHE (author) / XIONG TAO (author) / WU YI (author) / NIU CHUNPING (author)
2023-06-23
Patent
Electronic Resource
Chinese
| European Patent Office | 2023
| European Patent Office | 2023
Preparation method of bismuth telluride-based thermoelectric material
| European Patent Office | 2021
Gallium-containing bismuth telluride-based thermoelectric material and preparation method thereof
| European Patent Office | 2024
N-type bismuth telluride-based thermoelectric material and preparation method thereof
| European Patent Office | 2024