Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Manufacturing method of oxygen-free silicon nitride crucible for pulling monocrystalline silicon
The invention discloses a manufacturing method of an oxygen-free silicon nitride crucible for monocrystalline silicon drawing, and belongs to the technical field of monocrystalline silicon smelting purification, and the manufacturing method comprises the following steps: S1, fully mixing high-purity silicon nitride powder and polysilazane (PSZ), adding a volatile organic solvent, and fully and uniformly stirring to prepare mixed slurry; s2, carrying out ball milling treatment on the mixed slurry on a ball mill, and then standing the slurry for a period of time; s3, the slurry in the S2 is injected into a crucible mold prefabricated in advance, the grouting process is slow and stable, after grouting is completed, pressurization is continuously conducted for a certain time, the mold is opened, a crucible blank is taken out, and the crucible blank is dried at the room temperature to remove a solvent; and S4, the treated crucible blank is placed in a sintering furnace, in the nitrogen atmosphere, positive pressure is maintained, the crucible blank is heated to a molten state, heat preservation is conducted for a certain time in the molten state, furnace cooling is conducted, and the oxygen-free silicon nitride crucible is prepared. The technology is simple, and the prepared oxygen-free silicon nitride crucible is an ideal crucible for smelting and purification of monocrystalline silicon.
本发明公开了一种用于单晶硅拉制的无氧氮化硅坩埚的制作方法，属于单晶硅熔炼提纯的技术领域，包括：S1、将高纯氮化硅粉体与聚硅氮烷(PSZ)充分混合，加入易挥发性有机溶剂，充分搅拌均匀后，制得混合浆料；S2、将混合好的浆料在球磨机上进行球磨处理，之后将浆料静置一段时间；S3、将S2中的浆料注入提前预制好的坩埚模具中，注浆过程缓慢平稳，完成后，持续加压一定时间，开模取出坩埚坯体，在室温下干燥烘干去除溶剂；S4、将处理好的坩埚坯体放置于烧结炉中，在氮气氛围下，维持正压，升温至熔融状态，在熔融态下保温一定时间，随炉冷却制得不含氧氮化硅坩埚，本发明工艺简单，制得的无氧氮化硅坩埚是理想的单晶硅的熔炼提纯用坩埚。
Manufacturing method of oxygen-free silicon nitride crucible for pulling monocrystalline silicon
The invention discloses a manufacturing method of an oxygen-free silicon nitride crucible for monocrystalline silicon drawing, and belongs to the technical field of monocrystalline silicon smelting purification, and the manufacturing method comprises the following steps: S1, fully mixing high-purity silicon nitride powder and polysilazane (PSZ), adding a volatile organic solvent, and fully and uniformly stirring to prepare mixed slurry; s2, carrying out ball milling treatment on the mixed slurry on a ball mill, and then standing the slurry for a period of time; s3, the slurry in the S2 is injected into a crucible mold prefabricated in advance, the grouting process is slow and stable, after grouting is completed, pressurization is continuously conducted for a certain time, the mold is opened, a crucible blank is taken out, and the crucible blank is dried at the room temperature to remove a solvent; and S4, the treated crucible blank is placed in a sintering furnace, in the nitrogen atmosphere, positive pressure is maintained, the crucible blank is heated to a molten state, heat preservation is conducted for a certain time in the molten state, furnace cooling is conducted, and the oxygen-free silicon nitride crucible is prepared. The technology is simple, and the prepared oxygen-free silicon nitride crucible is an ideal crucible for smelting and purification of monocrystalline silicon.
本发明公开了一种用于单晶硅拉制的无氧氮化硅坩埚的制作方法，属于单晶硅熔炼提纯的技术领域，包括：S1、将高纯氮化硅粉体与聚硅氮烷(PSZ)充分混合，加入易挥发性有机溶剂，充分搅拌均匀后，制得混合浆料；S2、将混合好的浆料在球磨机上进行球磨处理，之后将浆料静置一段时间；S3、将S2中的浆料注入提前预制好的坩埚模具中，注浆过程缓慢平稳，完成后，持续加压一定时间，开模取出坩埚坯体，在室温下干燥烘干去除溶剂；S4、将处理好的坩埚坯体放置于烧结炉中，在氮气氛围下，维持正压，升温至熔融状态，在熔融态下保温一定时间，随炉冷却制得不含氧氮化硅坩埚，本发明工艺简单，制得的无氧氮化硅坩埚是理想的单晶硅的熔炼提纯用坩埚。
Manufacturing method of oxygen-free silicon nitride crucible for pulling monocrystalline silicon
一种用于单晶硅拉制的无氧氮化硅坩埚的制作方法
LIU LIXIN (Autor:in) / WANG ZHONGRAN (Autor:in) / LI LINWEI (Autor:in)
21.07.2023
Patent
Elektronische Ressource
Chinesisch
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