Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Preparation method of semiconductor power module packaging substrate
The invention relates to the technical field of electronic packaging materials, in particular to a preparation method of a semiconductor power module packaging substrate, the semiconductor power module packaging substrate is a copper-clad Al2O3 ceramic substrate, the preparation method comprises the following steps: uniformly spraying a copper sulfate solution on the surface of a dry Al2O3 ceramic green body, drying and sintering to obtain the Al2O3 ceramic substrate; and laminating the copper sheet and the Al2O3 ceramic substrate together, placing the laminated copper sheet and the Al2O3 ceramic substrate in flowing nitrogen, laying the laminated copper sheet and the Al2O3 ceramic substrate at the temperature of 1065-1083 DEG C for 0.5-1.5 h, and naturally cooling the laminated copper sheet and the Al2O3 ceramic substrate to normal temperature to obtain the copper-clad Al2O3 ceramic substrate. The method is used for solving the problem that the bonding strength of the DBC substrate is affected by oxygen release in the bonding process due to the adoption of a thermal oxidation method in the existing DBC process.
本发明涉及电子封装材料技术领域，尤其涉及一种半导体功率模块封装衬底的制备方法，所述半导体功率模块封装衬底为覆铜Al2O3陶瓷基板，所述制备方法包括以下步骤：将硫酸铜溶液均匀喷洒在干燥的Al2O3陶瓷生坯表面，干燥，烧结，得到Al2O3陶瓷基板；将铜片和Al2O3陶瓷基板叠合在一起，置于流动的氮气中，于温度1065～1083℃条件下敷接0.5～1.5h，自然冷却至常温，得到覆铜Al2O3陶瓷基板。本发明用于解决现有DBC工艺中采用热氧化法造成敷接过程中释放氧气，影响DBC基板的结合强度的问题。
Preparation method of semiconductor power module packaging substrate
The invention relates to the technical field of electronic packaging materials, in particular to a preparation method of a semiconductor power module packaging substrate, the semiconductor power module packaging substrate is a copper-clad Al2O3 ceramic substrate, the preparation method comprises the following steps: uniformly spraying a copper sulfate solution on the surface of a dry Al2O3 ceramic green body, drying and sintering to obtain the Al2O3 ceramic substrate; and laminating the copper sheet and the Al2O3 ceramic substrate together, placing the laminated copper sheet and the Al2O3 ceramic substrate in flowing nitrogen, laying the laminated copper sheet and the Al2O3 ceramic substrate at the temperature of 1065-1083 DEG C for 0.5-1.5 h, and naturally cooling the laminated copper sheet and the Al2O3 ceramic substrate to normal temperature to obtain the copper-clad Al2O3 ceramic substrate. The method is used for solving the problem that the bonding strength of the DBC substrate is affected by oxygen release in the bonding process due to the adoption of a thermal oxidation method in the existing DBC process.
本发明涉及电子封装材料技术领域，尤其涉及一种半导体功率模块封装衬底的制备方法，所述半导体功率模块封装衬底为覆铜Al2O3陶瓷基板，所述制备方法包括以下步骤：将硫酸铜溶液均匀喷洒在干燥的Al2O3陶瓷生坯表面，干燥，烧结，得到Al2O3陶瓷基板；将铜片和Al2O3陶瓷基板叠合在一起，置于流动的氮气中，于温度1065～1083℃条件下敷接0.5～1.5h，自然冷却至常温，得到覆铜Al2O3陶瓷基板。本发明用于解决现有DBC工艺中采用热氧化法造成敷接过程中释放氧气，影响DBC基板的结合强度的问题。
Preparation method of semiconductor power module packaging substrate
一种半导体功率模块封装衬底的制备方法
DUAN JINCHI (Autor:in) / LIAO GUANGCHAO (Autor:in)
15.09.2023
Patent
Elektronische Ressource
Chinesisch
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