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Germanium-antimony-tellurium phase change target material and preparation method and application thereof
The invention relates to a germanium-antimony-tellurium phase change target and a preparation method and application thereof.The preparation method of the germanium-antimony-tellurium phase change target comprises the following steps that germanium-antimony-tellurium alloy powder is subjected to die filling treatment, vacuum hot pressing sintering treatment and machining treatment, and the germanium-antimony-tellurium phase change target is obtained; the vacuum hot pressing sintering treatment comprises first pressurizing treatment, first heating treatment, first heat preservation and pressure maintaining treatment, second heating treatment, second heat preservation and pressure maintaining treatment and second pressurizing treatment which are sequentially carried out. According to the preparation method, the germanium-antimony-tellurium alloy powder is directly adopted for vacuum hot pressing sintering, the vacuum hot pressing sintering treatment process is divided into the stages of multi-stage pressurization, temperature rise and heat and pressure preservation, and the prepared germanium-antimony-tellurium phase change target is excellent in internal organization structure and high in density and purity and can meet the requirement of a phase change memory for a storage medium.
本发明涉及一种锗锑碲相变靶材及其制备方法与应用,所述锗锑碲相变靶材的制备方法包括如下步骤:锗锑碲合金粉经装模处理、真空热压烧结处理以及机加工处理,得到所述锗锑碲相变靶材;所述真空热压烧结处理包括依次进行的第一加压处理、第一升温处理、第一保温保压处理、第二升温处理、第二保温保压处理以及第二加压处理。本发明直接采用锗锑碲合金粉进行真空热压烧结,将真空热压烧结处理过程分为多级加压、升温及保温保压阶段,制得的锗锑碲相变靶材的内部组织结构优异,致密度与纯度较高,能够达到相变存储器对存储介质的要求。
Germanium-antimony-tellurium phase change target material and preparation method and application thereof
The invention relates to a germanium-antimony-tellurium phase change target and a preparation method and application thereof.The preparation method of the germanium-antimony-tellurium phase change target comprises the following steps that germanium-antimony-tellurium alloy powder is subjected to die filling treatment, vacuum hot pressing sintering treatment and machining treatment, and the germanium-antimony-tellurium phase change target is obtained; the vacuum hot pressing sintering treatment comprises first pressurizing treatment, first heating treatment, first heat preservation and pressure maintaining treatment, second heating treatment, second heat preservation and pressure maintaining treatment and second pressurizing treatment which are sequentially carried out. According to the preparation method, the germanium-antimony-tellurium alloy powder is directly adopted for vacuum hot pressing sintering, the vacuum hot pressing sintering treatment process is divided into the stages of multi-stage pressurization, temperature rise and heat and pressure preservation, and the prepared germanium-antimony-tellurium phase change target is excellent in internal organization structure and high in density and purity and can meet the requirement of a phase change memory for a storage medium.
本发明涉及一种锗锑碲相变靶材及其制备方法与应用,所述锗锑碲相变靶材的制备方法包括如下步骤:锗锑碲合金粉经装模处理、真空热压烧结处理以及机加工处理,得到所述锗锑碲相变靶材;所述真空热压烧结处理包括依次进行的第一加压处理、第一升温处理、第一保温保压处理、第二升温处理、第二保温保压处理以及第二加压处理。本发明直接采用锗锑碲合金粉进行真空热压烧结,将真空热压烧结处理过程分为多级加压、升温及保温保压阶段,制得的锗锑碲相变靶材的内部组织结构优异,致密度与纯度较高,能够达到相变存储器对存储介质的要求。
Germanium-antimony-tellurium phase change target material and preparation method and application thereof
一种锗锑碲相变靶材及其制备方法与应用
YAO LIJUN (Autor:in) / PAN JIE (Autor:in) / LIAO PEIJUN (Autor:in) / HUANG DONGCHANG (Autor:in) / ZHANG YIZHONG (Autor:in)
27.10.2023
Patent
Elektronische Ressource
Chinesisch
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