Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Tellurium-sulfur-cadmium target material and preparation method and application thereof
The invention discloses a preparation method of a tellurium-sulfur-cadmium target material, and the method comprises the following steps: (1) uniformly mixing cadmium telluride powder and cadmium sulfide powder to obtain mixed powder; (2) sintering the mixed powder at 500-700 DEG C for 1-2 hours to obtain primarily sintered powder; (3) ball-milling and mixing the primarily sintered powder to obtain ball-milled powder; (4) transferring the ball-milled powder into a mold and then subjected to hot pressed sintering in a vacuum environment, wherein heating is conducted to 400-500 DEG C, heat preservation is conducted for 30-50 min, then heating is conducted to 700-900 DEG C, heat preservation is conducted for 60-100 min, the pressure is 30-50 MPa, after sintering is completed, furnace cooling is conducted, and a target blank is obtained; (5) machining the target material blank, and manufacturing a tellurium-sulfur-cadmium target material finished product with the target size. The preparation method disclosed by the invention has the advantages of energy conservation, less material consumption, simplicity in operation, batch production and the like, and the prepared tellurium-sulfur-cadmium target material has relatively high density, the relative density is greater than 95%, and the sputtering performance is good.
本发明公开了一种碲硫镉靶材的制备方法，包括：(1)将碲化镉粉末和硫化镉粉末混合均匀，得到混合粉末；(2)将混合粉末在500～700℃下烧结1～2h，得到初烧结粉末；(3)将初烧结粉末进行球磨混合，得到球磨粉末；(4)将球磨粉末转入模具中，然后在真空环境下进行热压烧结，其中，先加热至400～500℃保温30～50min，再加热至700～900℃保温60～100min，压力为30～50MPa，烧结完成后，随炉冷却，得到靶材毛坯；(5)对靶材毛坯进行机加工，制成目标尺寸的碲硫镉靶材成品。本发明的制备方法具有节能、耗材少、操作简单、以及可批量生产等优点，所制备的碲硫镉靶材具有较高的密度，相对密度>95％，溅射性能好。
Tellurium-sulfur-cadmium target material and preparation method and application thereof
The invention discloses a preparation method of a tellurium-sulfur-cadmium target material, and the method comprises the following steps: (1) uniformly mixing cadmium telluride powder and cadmium sulfide powder to obtain mixed powder; (2) sintering the mixed powder at 500-700 DEG C for 1-2 hours to obtain primarily sintered powder; (3) ball-milling and mixing the primarily sintered powder to obtain ball-milled powder; (4) transferring the ball-milled powder into a mold and then subjected to hot pressed sintering in a vacuum environment, wherein heating is conducted to 400-500 DEG C, heat preservation is conducted for 30-50 min, then heating is conducted to 700-900 DEG C, heat preservation is conducted for 60-100 min, the pressure is 30-50 MPa, after sintering is completed, furnace cooling is conducted, and a target blank is obtained; (5) machining the target material blank, and manufacturing a tellurium-sulfur-cadmium target material finished product with the target size. The preparation method disclosed by the invention has the advantages of energy conservation, less material consumption, simplicity in operation, batch production and the like, and the prepared tellurium-sulfur-cadmium target material has relatively high density, the relative density is greater than 95%, and the sputtering performance is good.
本发明公开了一种碲硫镉靶材的制备方法，包括：(1)将碲化镉粉末和硫化镉粉末混合均匀，得到混合粉末；(2)将混合粉末在500～700℃下烧结1～2h，得到初烧结粉末；(3)将初烧结粉末进行球磨混合，得到球磨粉末；(4)将球磨粉末转入模具中，然后在真空环境下进行热压烧结，其中，先加热至400～500℃保温30～50min，再加热至700～900℃保温60～100min，压力为30～50MPa，烧结完成后，随炉冷却，得到靶材毛坯；(5)对靶材毛坯进行机加工，制成目标尺寸的碲硫镉靶材成品。本发明的制备方法具有节能、耗材少、操作简单、以及可批量生产等优点，所制备的碲硫镉靶材具有较高的密度，相对密度>95％，溅射性能好。
Tellurium-sulfur-cadmium target material and preparation method and application thereof
一种碲硫镉靶材及其制备方法与应用
YU FANG (Autor:in) / WEN CHONGBIN (Autor:in)
10.08.2021
Patent
Elektronische Ressource
Chinesisch
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