Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Preparation method of silicon nitride closed-pore heat-insulating ceramic
The invention relates to a preparation method of silicon nitride closed-pore heat-insulating ceramic, which comprises the following steps: mixing 30-90 vol.% of Si3N4 hollow microspheres and 10-70 vol.% of Si powder to obtain mixed powder, mixing the mixed powder with absolute ethyl alcohol, uniformly filling a mold with the mixed powder, and pressurizing to form a Si3N4 ceramic biscuit; the Si3N4 ceramic biscuit is directly put into a nitriding furnace, N2 serves as reaction gas, the gas flow is kept at 60-100 ml/min, the temperature is increased to 1100-1200 DEG C from the room temperature, then the temperature is slowly increased to 1350-1450 DEG C, heat preservation is conducted for 4-6 h, cooling is conducted, and a pre-strengthened Si3N4 ceramic preform is obtained; and carrying out precursor impregnation, cracking and densification treatment on the pre-reinforced Si3N4 ceramic preform to obtain the Si3N4 closed-pore heat-insulating ceramic. According to the invention, the problems of high dielectric constant, high thermal conductivity and high density of the existing Si3N4 ceramic are solved.
本发明涉及一种氮化硅闭气孔隔热陶瓷的制备方法，包括以下步骤：将30～90vol.％的Si3N4中空微球和10～70vol.％的Si粉混合得到混粉，再与无水乙醇混合后均匀填充到模具中加压形成Si3N4陶瓷素坯；将Si3N4陶瓷素坯直接放入氮化炉中，以N2作为反应气，保持气流量为60～100ml/min，从室温升温至1100～1200℃后缓慢升温至1350～1450℃保温4～6h，冷却得到预强化的Si3N4陶瓷预制体；对预强化的Si3N4陶瓷预制体进行先驱体浸渍裂解致密化处理，得到Si3N4闭气孔隔热陶瓷。本发明解决了目前Si3N4陶瓷介电常数偏高，热导率和密度相对较大的问题。
Preparation method of silicon nitride closed-pore heat-insulating ceramic
The invention relates to a preparation method of silicon nitride closed-pore heat-insulating ceramic, which comprises the following steps: mixing 30-90 vol.% of Si3N4 hollow microspheres and 10-70 vol.% of Si powder to obtain mixed powder, mixing the mixed powder with absolute ethyl alcohol, uniformly filling a mold with the mixed powder, and pressurizing to form a Si3N4 ceramic biscuit; the Si3N4 ceramic biscuit is directly put into a nitriding furnace, N2 serves as reaction gas, the gas flow is kept at 60-100 ml/min, the temperature is increased to 1100-1200 DEG C from the room temperature, then the temperature is slowly increased to 1350-1450 DEG C, heat preservation is conducted for 4-6 h, cooling is conducted, and a pre-strengthened Si3N4 ceramic preform is obtained; and carrying out precursor impregnation, cracking and densification treatment on the pre-reinforced Si3N4 ceramic preform to obtain the Si3N4 closed-pore heat-insulating ceramic. According to the invention, the problems of high dielectric constant, high thermal conductivity and high density of the existing Si3N4 ceramic are solved.
本发明涉及一种氮化硅闭气孔隔热陶瓷的制备方法，包括以下步骤：将30～90vol.％的Si3N4中空微球和10～70vol.％的Si粉混合得到混粉，再与无水乙醇混合后均匀填充到模具中加压形成Si3N4陶瓷素坯；将Si3N4陶瓷素坯直接放入氮化炉中，以N2作为反应气，保持气流量为60～100ml/min，从室温升温至1100～1200℃后缓慢升温至1350～1450℃保温4～6h，冷却得到预强化的Si3N4陶瓷预制体；对预强化的Si3N4陶瓷预制体进行先驱体浸渍裂解致密化处理，得到Si3N4闭气孔隔热陶瓷。本发明解决了目前Si3N4陶瓷介电常数偏高，热导率和密度相对较大的问题。
Preparation method of silicon nitride closed-pore heat-insulating ceramic
一种氮化硅闭气孔隔热陶瓷的制备方法
CHENG LAIFEI (Autor:in) / YE FANG (Autor:in) / YANG HONGKE (Autor:in) / ZHAO KAI (Autor:in) / ZHANG LITONG (Autor:in)
10.11.2023
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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