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Preparation method of rare earth doped IZO target material
The invention relates to the technical field of target materials, in particular to a rare earth doped IZO target material and a preparation method thereof, and the preparation method comprises the steps of raw material selection, primary ball milling, secondary ball milling, spray granulation, compression molding, high-temperature sintering and the like. The large-size rare earth doped IZO target material with high relative density and small grain size can be obtained by using a process mode of doping various rare earth, optimizing the weight ratio of raw materials, the usage amount of deionized water, the solid content, the particle size and the density of powder and adopting a reasonable high-temperature sintering process. The large-size rare earth doped IZO target material prepared by the preparation method provided by the invention is suitable for preparation of modern electronic components and has a wide application prospect.
本发明涉及靶材技术领域,具体涉及一种稀土掺杂IZO靶材及其制备方法,该制备方法包括原料选择、一次球磨、二次球磨、喷雾造粒、压制成型和高温烧结等步骤。本发明使用多种稀土掺杂的工艺方式,同时优化了原料重量比、去离子水的使用量、固含量、粉末的粒径和密度,以及合理的高温烧结工艺,可获得具有高相对密度和小晶粒尺寸的大尺寸稀土掺杂IZO靶材。本发明提供的制备方法制备的大尺寸稀土掺杂IZO靶材适用于现代电子元器件的制备,具有广阔的应用前景。
Preparation method of rare earth doped IZO target material
The invention relates to the technical field of target materials, in particular to a rare earth doped IZO target material and a preparation method thereof, and the preparation method comprises the steps of raw material selection, primary ball milling, secondary ball milling, spray granulation, compression molding, high-temperature sintering and the like. The large-size rare earth doped IZO target material with high relative density and small grain size can be obtained by using a process mode of doping various rare earth, optimizing the weight ratio of raw materials, the usage amount of deionized water, the solid content, the particle size and the density of powder and adopting a reasonable high-temperature sintering process. The large-size rare earth doped IZO target material prepared by the preparation method provided by the invention is suitable for preparation of modern electronic components and has a wide application prospect.
本发明涉及靶材技术领域,具体涉及一种稀土掺杂IZO靶材及其制备方法,该制备方法包括原料选择、一次球磨、二次球磨、喷雾造粒、压制成型和高温烧结等步骤。本发明使用多种稀土掺杂的工艺方式,同时优化了原料重量比、去离子水的使用量、固含量、粉末的粒径和密度,以及合理的高温烧结工艺,可获得具有高相对密度和小晶粒尺寸的大尺寸稀土掺杂IZO靶材。本发明提供的制备方法制备的大尺寸稀土掺杂IZO靶材适用于现代电子元器件的制备,具有广阔的应用前景。
Preparation method of rare earth doped IZO target material
一种稀土掺杂IZO靶材的制备方法
WANG ZHIQIANG (Autor:in) / ZENG DUNFENG (Autor:in) / ZENG TAN (Autor:in) / CHEN GUANGYUAN (Autor:in)
21.11.2023
Patent
Elektronische Ressource
Chinesisch
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