Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Hollow runner silicon carbide sucker base and preparation method thereof
The invention belongs to the technical field of silicon carbide ceramic material processing, and particularly relates to a hollow runner silicon carbide sucker base and a preparation method thereof. According to the preparation method of the hollow runner silicon carbide suction cup base, the first SiC carbon blanks are prepared firstly, then the two first SiC carbon blanks are buckled, the product is prepared in a pressing curing and low-temperature reaction sintering mode, and when the hollow runner silicon carbide suction cup base is used, the first SiC carbon blanks on the upper layer and the first SiC carbon blanks on the lower layer are buckled, and the two first SiC carbon blanks are connected through a ceramic bonding film. By means of the preparation method, the prepared SiC suction cup base has good mechanical strength and compactness, the hollow runner structure of the prepared SiC suction cup base can be complete, and the influence of residual Si on the product performance is eliminated. The preparation method has the characteristics of low cost, simple principle and easiness in operation. The preparation method disclosed by the invention is environment-friendly and is easy to popularize and apply in the field of silicon carbide ceramic material processing.
本发明属于碳化硅陶瓷材料加工技术领域，具体涉及一种中空流道碳化硅吸盘底座及其制备方法。本发明所述中空流道碳化硅吸盘底座的制备方法，先制备第一SiC碳坯，再将两块第一SiC碳坯扣合，并通过施压固化、低温反应烧结的方式制备产品，使用时，将上层第一SiC碳坯与下层第一SiC碳坯相扣合，两个第一SiC碳坯之间使用陶瓷粘接膜进行连接。通过本发明的制备方法，能够使制备得到的SiC吸盘底座具有良好的机械强度、致密性，并能够使制备得到的SiC吸盘底座中空流道结构完整，消除残Si对产品性能的影响。本申请的制备方法具有成本低廉、原理简单、容易操作的特点。本发明的制备方法具备环境友好性，易于在碳化硅陶瓷材料加工领域推广应用。
Hollow runner silicon carbide sucker base and preparation method thereof
The invention belongs to the technical field of silicon carbide ceramic material processing, and particularly relates to a hollow runner silicon carbide sucker base and a preparation method thereof. According to the preparation method of the hollow runner silicon carbide suction cup base, the first SiC carbon blanks are prepared firstly, then the two first SiC carbon blanks are buckled, the product is prepared in a pressing curing and low-temperature reaction sintering mode, and when the hollow runner silicon carbide suction cup base is used, the first SiC carbon blanks on the upper layer and the first SiC carbon blanks on the lower layer are buckled, and the two first SiC carbon blanks are connected through a ceramic bonding film. By means of the preparation method, the prepared SiC suction cup base has good mechanical strength and compactness, the hollow runner structure of the prepared SiC suction cup base can be complete, and the influence of residual Si on the product performance is eliminated. The preparation method has the characteristics of low cost, simple principle and easiness in operation. The preparation method disclosed by the invention is environment-friendly and is easy to popularize and apply in the field of silicon carbide ceramic material processing.
本发明属于碳化硅陶瓷材料加工技术领域，具体涉及一种中空流道碳化硅吸盘底座及其制备方法。本发明所述中空流道碳化硅吸盘底座的制备方法，先制备第一SiC碳坯，再将两块第一SiC碳坯扣合，并通过施压固化、低温反应烧结的方式制备产品，使用时，将上层第一SiC碳坯与下层第一SiC碳坯相扣合，两个第一SiC碳坯之间使用陶瓷粘接膜进行连接。通过本发明的制备方法，能够使制备得到的SiC吸盘底座具有良好的机械强度、致密性，并能够使制备得到的SiC吸盘底座中空流道结构完整，消除残Si对产品性能的影响。本申请的制备方法具有成本低廉、原理简单、容易操作的特点。本发明的制备方法具备环境友好性，易于在碳化硅陶瓷材料加工领域推广应用。
Hollow runner silicon carbide sucker base and preparation method thereof
一种中空流道碳化硅吸盘底座及其制备方法
SONG YUNYUN (Autor:in) / FAN TIANYANG (Autor:in) / CHENG QIANG (Autor:in) / HE HUI (Autor:in) / ZHOU JIGUANG (Autor:in) / LIU JIE (Autor:in)
27.02.2024
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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