Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
High-thermal-conductivity silicon nitride sintered body, silicon nitride substrate, silicon nitride circuit substrate, and semiconductor device
A high thermal conductivity sintered silicon nitride according to an embodiment of the present invention is provided with silicon nitride crystal grains and a grain boundary phase, and has a thermal conductivity of 80 W/(m * K) or more. The average value of the solid-solution oxygen content of the silicon nitride crystal grains present on a unit area of 20 [mu] m * 20 [mu] m in an arbitrary cross-section is 0.2 wt% or less. The average of the major diameters of the silicon nitride crystal grains present on a unit area of 50 [mu] m * 50 [mu] m in an arbitrary cross-section is 1 [mu] m to 10 [mu] m (inclusive). The average value of the aspect ratios of the silicon nitride crystal grains present on the unit area of 50 [mu] m * 50 [mu] m is 2-10 (inclusive).
实施方式的高导热性氮化硅烧结体，具备氮化硅晶粒及晶界相，所述氮化硅烧结体的导热率为80W/(m·K)以上。任意截面中单位面积20μm×20μm上存在的所述氮化硅晶粒的固溶氧量的平均值为0.2wt％以下。任意截面中单位面积50μm×50μm上存在的所述氮化硅晶粒的长径的平均值为1μm以上10μm以下。所述单位面积50μm×50μm上存在的所述氮化硅晶粒的长宽比的平均值为2以上10以下。
High-thermal-conductivity silicon nitride sintered body, silicon nitride substrate, silicon nitride circuit substrate, and semiconductor device
A high thermal conductivity sintered silicon nitride according to an embodiment of the present invention is provided with silicon nitride crystal grains and a grain boundary phase, and has a thermal conductivity of 80 W/(m * K) or more. The average value of the solid-solution oxygen content of the silicon nitride crystal grains present on a unit area of 20 [mu] m * 20 [mu] m in an arbitrary cross-section is 0.2 wt% or less. The average of the major diameters of the silicon nitride crystal grains present on a unit area of 50 [mu] m * 50 [mu] m in an arbitrary cross-section is 1 [mu] m to 10 [mu] m (inclusive). The average value of the aspect ratios of the silicon nitride crystal grains present on the unit area of 50 [mu] m * 50 [mu] m is 2-10 (inclusive).
实施方式的高导热性氮化硅烧结体，具备氮化硅晶粒及晶界相，所述氮化硅烧结体的导热率为80W/(m·K)以上。任意截面中单位面积20μm×20μm上存在的所述氮化硅晶粒的固溶氧量的平均值为0.2wt％以下。任意截面中单位面积50μm×50μm上存在的所述氮化硅晶粒的长径的平均值为1μm以上10μm以下。所述单位面积50μm×50μm上存在的所述氮化硅晶粒的长宽比的平均值为2以上10以下。
High-thermal-conductivity silicon nitride sintered body, silicon nitride substrate, silicon nitride circuit substrate, and semiconductor device
高导热性氮化硅烧结体、氮化硅基板、氮化硅电路基板及半导体装置
AOKI YOSHIYUKI (Autor:in) / GONOHE YASUHIRO (Autor:in) / IWAI KENTARO (Autor:in) / FUKASAWA TAKAYUKI (Autor:in) / YAMAGATA HIDETO (Autor:in)
29.03.2024
Patent
Elektronische Ressource
Chinesisch
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