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SILICON NITRIDE SINTERED BODY, SILICON NITRIDE SUBSTRATE, AND SILICON NITRIDE CIRCUIT SUBSTRATE
In a silicon nitride sintered body including silicon nitride crystal grains (1) and a grain boundary phase, dislocation defect portions (2) exists inside at least some of the silicon nitride crystal grains (1). A percentage of a number of the at least some of the silicon nitride crystal grains (1) among any 50 of the silicon nitride crystal grains (1) having completely visible contours in a observation region of any cross section or surface of the silicon nitride sintered body is not less than 50% and not more than 100%. It is favorable that a plate thickness of the silicon nitride substrate (12), in which the silicon nitride sintered body is used, is not less than 0.1 mm and not more than 0.4 mm. The TCT characteristics can be improved by using the silicon nitride substrate (12) in the silicon nitride circuit board (10).
SILICON NITRIDE SINTERED BODY, SILICON NITRIDE SUBSTRATE, AND SILICON NITRIDE CIRCUIT SUBSTRATE
In a silicon nitride sintered body including silicon nitride crystal grains (1) and a grain boundary phase, dislocation defect portions (2) exists inside at least some of the silicon nitride crystal grains (1). A percentage of a number of the at least some of the silicon nitride crystal grains (1) among any 50 of the silicon nitride crystal grains (1) having completely visible contours in a observation region of any cross section or surface of the silicon nitride sintered body is not less than 50% and not more than 100%. It is favorable that a plate thickness of the silicon nitride substrate (12), in which the silicon nitride sintered body is used, is not less than 0.1 mm and not more than 0.4 mm. The TCT characteristics can be improved by using the silicon nitride substrate (12) in the silicon nitride circuit board (10).
SILICON NITRIDE SINTERED BODY, SILICON NITRIDE SUBSTRATE, AND SILICON NITRIDE CIRCUIT SUBSTRATE
SILICIUMNITRIDSINTERKÖRPER, SILIZIUMNITRIDSUBSTRAT UND SILICIUMNITRIDSCHALTUNGSSUBSTRAT
CORPS FRITTÉ EN NITRURE DE SILICIUM, SUBSTRAT EN NITRURE DE SILICIUM ET SUBSTRAT DE CIRCUIT EN NITRURE DE SILICIUM
AOKI KATSUYUKI (Autor:in) / IWAI KENTARO (Autor:in) / FUKASAWA TAKAYUKI (Autor:in) / MOMMA JUN (Autor:in) / SANO TAKASHI (Autor:in)
27.04.2022
Patent
Elektronische Ressource
Englisch
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