Fachinformationsdienst BAUdigital

Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik

    Sputtering target material and method for producing oxide semiconductor

    Neue Suche nach: TERAMURA KYOSUKE
    Neue Suche nach: SHIRANITA RYO
    Neue Suche nach: TOKUCHI SHIGEKI

    This sputtering target is made of an oxide containing an indium (In) element, a zinc (Zn) element, and a tantalum (Ta) element, the atomic ratio of each element satisfying all of the formulae (1) to (3): 0.1 < = (In + Ta)/(In + Zn + Ta) < 0.4 (1), 0.6 < Zn/(In + Zn + Ta) < 0.9 (2), and 0.001 < = Ta/(In + Zn + Ta) < 0.014 (3), the relative density of the sputtering target being 95% or more, and an oxide semiconductor having the same composition is manufactured using the sputtering target.

    本发明的溅射靶材由包含铟(In)元素、锌(Zn)元素及钽(Ta)元素的氧化物制成，各元素的原子比满足式(1)至(3)的全部式子，0.1≤(In+Ta)/(In+Zn+Ta)＜0.4(1)，0.6＜Zn/(In+Zn+Ta)≤0.9(2)，0.001≤Ta/(In+Zn+Ta)＜0.014(3)，所述溅射靶材的相对密度为95％以上，使用该溅射靶材制造上述相同组成的氧化物半导体。

    Zugriff

    Download

    Zugriff

    Download

    Seitennavigation

    Dokumentinformationen
    Ähnliche Titel

    Exportieren, teilen und zitieren

    Sputtering target material and method for producing oxide semiconductor

    Neue Suche nach: TERAMURA KYOSUKE
    Neue Suche nach: SHIRANITA RYO
    Neue Suche nach: TOKUCHI SHIGEKI

    This sputtering target is made of an oxide containing an indium (In) element, a zinc (Zn) element, and a tantalum (Ta) element, the atomic ratio of each element satisfying all of the formulae (1) to (3): 0.1 < = (In + Ta)/(In + Zn + Ta) < 0.4 (1), 0.6 < Zn/(In + Zn + Ta) < 0.9 (2), and 0.001 < = Ta/(In + Zn + Ta) < 0.014 (3), the relative density of the sputtering target being 95% or more, and an oxide semiconductor having the same composition is manufactured using the sputtering target.

    本发明的溅射靶材由包含铟(In)元素、锌(Zn)元素及钽(Ta)元素的氧化物制成，各元素的原子比满足式(1)至(3)的全部式子，0.1≤(In+Ta)/(In+Zn+Ta)＜0.4(1)，0.6＜Zn/(In+Zn+Ta)≤0.9(2)，0.001≤Ta/(In+Zn+Ta)＜0.014(3)，所述溅射靶材的相对密度为95％以上，使用该溅射靶材制造上述相同组成的氧化物半导体。

    Zugriff

    Download

    Sputtering target material and method for producing oxide semiconductor

    Neue Suche nach: TERAMURA KYOSUKE
    Neue Suche nach: SHIRANITA RYO
    Neue Suche nach: TOKUCHI SHIGEKI

    This sputtering target is made of an oxide containing an indium (In) element, a zinc (Zn) element, and a tantalum (Ta) element, the atomic ratio of each element satisfying all of the formulae (1) to (3): 0.1 < = (In + Ta)/(In + Zn + Ta) < 0.4 (1), 0.6 < Zn/(In + Zn + Ta) < 0.9 (2), and 0.001 < = Ta/(In + Zn + Ta) < 0.014 (3), the relative density of the sputtering target being 95% or more, and an oxide semiconductor having the same composition is manufactured using the sputtering target.

    本发明的溅射靶材由包含铟(In)元素、锌(Zn)元素及钽(Ta)元素的氧化物制成，各元素的原子比满足式(1)至(3)的全部式子，0.1≤(In+Ta)/(In+Zn+Ta)＜0.4(1)，0.6＜Zn/(In+Zn+Ta)≤0.9(2)，0.001≤Ta/(In+Zn+Ta)＜0.014(3)，所述溅射靶材的相对密度为95％以上，使用该溅射靶材制造上述相同组成的氧化物半导体。

    Zugriff

    Download

    Zugriff

    Download

    Seitennavigation

    Dokumentinformationen
    Ähnliche Titel

    Exportieren, teilen und zitieren

    Dokumentinformationen
    Titel:

    Sputtering target material and method for producing oxide semiconductor

    Weitere Titelangaben:

    溅射靶材及氧化物半导体的制造方法

    Beteiligte:

    TERAMURA KYOSUKE (Autor:in) / SHIRANITA RYO (Autor:in) / TOKUCHI SHIGEKI (Autor:in)

    Erscheinungsdatum:

    04.06.2024

    Medientyp:

    Patent

    Format:

    Elektronische Ressource

    Sprache:

    Chinesisch

    Klassifikation:

    IPC:  C23C Beschichten metallischer Werkstoffe , COATING METALLIC MATERIAL / C01G Verbindungen der von den Unterklassen C01D oder C01F nicht umfassten Metalle , COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F / C04B Kalk , LIME / H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES

    Ähnliche Titel

    Oxide sintered material, method of producing oxide sintered material, sputtering target, and method of producing semiconductor device

    MIYANAGA MIKI / WATATANI KENICHI / AWATA HIDEAKI | Europäisches Patentamt | 2020

    Freier Zugriff

    Oxide Sintered Material, Method of Producing Oxide Sintered Material, Sputtering Target, and Method of Producing Semiconductor Device

    MIYANAGA MIKI / WATATANI KENICHI / AWATA HIDEAKI | Europäisches Patentamt | 2020

    Freier Zugriff

    OXIDE SINTERED MATERIAL, METHOD OF PRODUCING OXIDE SINTERED MATERIAL, SPUTTERING TARGET, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE

    MIYANAGA MIKI / WATATANI KENICHI / AWATA HIDEAKI | Europäisches Patentamt | 2018

    Freier Zugriff

    Oxide sintered material, method of producing oxide sintered material, sputtering target, and method of producing semiconductor device

    MIYANAGA MIKI / WATATANI KENICHI / AWATA HIDEAKI | Europäisches Patentamt | 2023

    Freier Zugriff

    Oxide sintered material, method of producing oxide sintered material, sputtering target, and method of producing semiconductor device

    MIYANAGA MIKI / WATATANI KENICHI / AWATA HIDEAKI | Europäisches Patentamt | 2022

    Freier Zugriff
    Nach oben