Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Indium-free target material doped with trace germanium and zinc and preparation method of indium-free target material
The invention relates to the technical field of target materials, in particular to an indium-free target material doped with trace germanium and zinc and a preparation method of the indium-free target material. The indium-free target material doped with trace germanium and zinc is prepared through the following preparation steps of (1) raw material selection, (2) mixing and sanding, (3) spray granulation, (4) cold press molding and (5) sintering. According to the indium-free target material doped with the trace amount of germanium and zinc, the zinc oxide powder and the germanium oxide powder are doped in the tin oxide powder, so that the compactness and the electric conductivity of the target material are improved, and the indium-free target material with excellent comprehensive performance can be obtained by continuously optimizing a preparation process and process parameters; and the target material can meet the requirements of different application fields.
本发明涉及靶材技术领域，具体涉及一种微量掺杂锗锌的无铟靶材及其制备方法。本发明的微量掺杂锗锌的无铟靶材由以下制备步骤得到：(1)原料选择、(2)混合砂磨、(3)喷雾造粒、(4)冷压成型、(5)烧结。本发明的微量掺杂锗锌的无铟靶材通过将氧化锌粉末和氧化锗粉末掺杂在氧化锡粉末中，使得靶材的致密度和导电率得到了提高，并且通过不断优化制备工艺和工艺参数，可以获得具有综合性能优异的无铟靶材，使得靶材能够满足不同应用领域的需求。
Indium-free target material doped with trace germanium and zinc and preparation method of indium-free target material
The invention relates to the technical field of target materials, in particular to an indium-free target material doped with trace germanium and zinc and a preparation method of the indium-free target material. The indium-free target material doped with trace germanium and zinc is prepared through the following preparation steps of (1) raw material selection, (2) mixing and sanding, (3) spray granulation, (4) cold press molding and (5) sintering. According to the indium-free target material doped with the trace amount of germanium and zinc, the zinc oxide powder and the germanium oxide powder are doped in the tin oxide powder, so that the compactness and the electric conductivity of the target material are improved, and the indium-free target material with excellent comprehensive performance can be obtained by continuously optimizing a preparation process and process parameters; and the target material can meet the requirements of different application fields.
本发明涉及靶材技术领域，具体涉及一种微量掺杂锗锌的无铟靶材及其制备方法。本发明的微量掺杂锗锌的无铟靶材由以下制备步骤得到：(1)原料选择、(2)混合砂磨、(3)喷雾造粒、(4)冷压成型、(5)烧结。本发明的微量掺杂锗锌的无铟靶材通过将氧化锌粉末和氧化锗粉末掺杂在氧化锡粉末中，使得靶材的致密度和导电率得到了提高，并且通过不断优化制备工艺和工艺参数，可以获得具有综合性能优异的无铟靶材，使得靶材能够满足不同应用领域的需求。
Indium-free target material doped with trace germanium and zinc and preparation method of indium-free target material
一种微量掺杂锗锌的无铟靶材及其制备方法
ZENG DUNFENG (Autor:in) / WANG ZHIQIANG (Autor:in) / ZENG TAN (Autor:in) / CHEN GUANGYUAN (Autor:in)
14.06.2024
Patent
Elektronische Ressource
Chinesisch
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