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Wide-temperature high-stability dielectric material and preparation method thereof
The invention discloses a wide-temperature high-stability dielectric material and a preparation method thereof, and relates to the technical field of ceramic capacitor dielectric materials.The dielectric material is prepared from Li2CO3, K2CO3, Na2CO3, Bi2O3, TiO2, Ta2O5, Nb2O5 and BaTiO3. The dielectric ceramic prepared through the method is high in dielectric constant, low in loss, excellent in insulativity, not high in sintering temperature, simple in preparation process, simple and controllable in formula raw material and suitable for industrial production. The sintering temperature does not exceed 1200 DEG C, the room-temperature dielectric constant of the material reaches 1300, the room-temperature dielectric loss does not exceed 2%, the temperature change rate in the temperature range of-55 DEG C to 200 DEG C does not exceed +/-15%, the room-temperature resistivity is larger than 5.6 * 10 < 11 > omega.cm, and the requirement of multilayer ceramic capacitor dielectric ceramic meeting the X9R characteristic is met.
本发明公开了一种宽温高稳定型的介质材料及其制备方法，涉及陶瓷电容器介质材料技术领域，该介质材料包括Li2CO3、K2CO3、Na2CO3、Bi2O3、TiO2、Ta2O5、Nb2O5、BaTiO3原料，本发明所制备的介质陶瓷的介电常数高、损耗低、绝缘性优异及烧结温度不高，制备工艺简单，配方原料简易可控，烧结温度不超过1200℃，材料室温介电常数达1300、室温介电损耗不超过2％，在‑55℃～200℃温度范围内容温变化率不超过±15％，室温电阻率大于5.6×1011Ω·cm，达到了满足X9R特性的多层陶瓷电容器介质陶瓷的要求。
Wide-temperature high-stability dielectric material and preparation method thereof
The invention discloses a wide-temperature high-stability dielectric material and a preparation method thereof, and relates to the technical field of ceramic capacitor dielectric materials.The dielectric material is prepared from Li2CO3, K2CO3, Na2CO3, Bi2O3, TiO2, Ta2O5, Nb2O5 and BaTiO3. The dielectric ceramic prepared through the method is high in dielectric constant, low in loss, excellent in insulativity, not high in sintering temperature, simple in preparation process, simple and controllable in formula raw material and suitable for industrial production. The sintering temperature does not exceed 1200 DEG C, the room-temperature dielectric constant of the material reaches 1300, the room-temperature dielectric loss does not exceed 2%, the temperature change rate in the temperature range of-55 DEG C to 200 DEG C does not exceed +/-15%, the room-temperature resistivity is larger than 5.6 * 10 < 11 > omega.cm, and the requirement of multilayer ceramic capacitor dielectric ceramic meeting the X9R characteristic is met.
本发明公开了一种宽温高稳定型的介质材料及其制备方法，涉及陶瓷电容器介质材料技术领域，该介质材料包括Li2CO3、K2CO3、Na2CO3、Bi2O3、TiO2、Ta2O5、Nb2O5、BaTiO3原料，本发明所制备的介质陶瓷的介电常数高、损耗低、绝缘性优异及烧结温度不高，制备工艺简单，配方原料简易可控，烧结温度不超过1200℃，材料室温介电常数达1300、室温介电损耗不超过2％，在‑55℃～200℃温度范围内容温变化率不超过±15％，室温电阻率大于5.6×1011Ω·cm，达到了满足X9R特性的多层陶瓷电容器介质陶瓷的要求。
Wide-temperature high-stability dielectric material and preparation method thereof
一种宽温高稳定型的介质材料及其制备方法
LI YU (Autor:in) / HUANG XUECHEN (Autor:in) / LIU LUYI (Autor:in) / GAO XUEMEI (Autor:in) / XU MEI (Autor:in) / GONG MEILING (Autor:in)
21.06.2024
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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