Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Preparation method of high-purity silicon carbide large-size wafer boat
The invention discloses a preparation method of a high-purity silicon carbide large-size wafer boat, and relates to the technical field of wafer boats, the high-purity silicon carbide large-size wafer boat comprises a wafer boat upper top plate and a wafer, a supporting stand column is annularly arranged in the wafer boat upper top plate, a wafer boat lower top plate is installed at the bottom of the supporting stand column, and a placement clamping groove is formed in the outer surface of the supporting stand column; and the wafer is arranged in the placement clamping groove. According to the preparation method of the high-purity silicon carbide large-size wafer boat, the high-purity silicon infiltration densification process belongs to the near-net-size sintering process, deformation generated in the high-temperature process can be generally controlled to be about 0.1%, meanwhile, during densification, synchronous connection is achieved through welding flux between an upper wafer boat top plate, a lower wafer boat top plate and supporting stand columns, and the high-purity silicon carbide large-size wafer boat is obtained. According to the large-size silicon carbide wafer boat manufacturing method, high-precision manufacturing of the wafer boat is achieved, the substrate compactness is achieved through the infiltration compactness-connection integrated technology, meanwhile, connection of the wafer boat upper top plate, the wafer boat lower top plate and the supporting stand columns is achieved, large deformation cannot be generated, and the large-size silicon carbide wafer boat manufacturing technology is very ideal.
本发明公开了高纯碳化硅大尺寸晶舟的制备方法，涉及晶舟技术领域，包括晶舟上顶板和晶圆片，晶舟上顶板的内部环形设置有支撑立柱，且支撑立柱的底部安装有晶舟下顶板，所述支撑立柱的外表面设置有放置卡槽，所述晶圆片设置于放置卡槽的内部。高纯碳化硅大尺寸晶舟的制备方法，高纯硅熔渗致密过程属于近净尺寸烧结过程，高温过程产生的变形一般可以控制再1‰左右，同时，在致密化的同时，利用晶舟上顶板和晶舟下顶板以及支撑立柱之间的焊料同步连接，实现晶舟的高精度制造，熔渗致密‑连接一体化技术在解决基体致密的同时，实现了晶舟上顶板和晶舟下顶板以及支撑立柱的连接，而且不会产生较大变形，是一种非常理想的大尺寸碳化硅晶舟制造技术。
Preparation method of high-purity silicon carbide large-size wafer boat
The invention discloses a preparation method of a high-purity silicon carbide large-size wafer boat, and relates to the technical field of wafer boats, the high-purity silicon carbide large-size wafer boat comprises a wafer boat upper top plate and a wafer, a supporting stand column is annularly arranged in the wafer boat upper top plate, a wafer boat lower top plate is installed at the bottom of the supporting stand column, and a placement clamping groove is formed in the outer surface of the supporting stand column; and the wafer is arranged in the placement clamping groove. According to the preparation method of the high-purity silicon carbide large-size wafer boat, the high-purity silicon infiltration densification process belongs to the near-net-size sintering process, deformation generated in the high-temperature process can be generally controlled to be about 0.1%, meanwhile, during densification, synchronous connection is achieved through welding flux between an upper wafer boat top plate, a lower wafer boat top plate and supporting stand columns, and the high-purity silicon carbide large-size wafer boat is obtained. According to the large-size silicon carbide wafer boat manufacturing method, high-precision manufacturing of the wafer boat is achieved, the substrate compactness is achieved through the infiltration compactness-connection integrated technology, meanwhile, connection of the wafer boat upper top plate, the wafer boat lower top plate and the supporting stand columns is achieved, large deformation cannot be generated, and the large-size silicon carbide wafer boat manufacturing technology is very ideal.
本发明公开了高纯碳化硅大尺寸晶舟的制备方法，涉及晶舟技术领域，包括晶舟上顶板和晶圆片，晶舟上顶板的内部环形设置有支撑立柱，且支撑立柱的底部安装有晶舟下顶板，所述支撑立柱的外表面设置有放置卡槽，所述晶圆片设置于放置卡槽的内部。高纯碳化硅大尺寸晶舟的制备方法，高纯硅熔渗致密过程属于近净尺寸烧结过程，高温过程产生的变形一般可以控制再1‰左右，同时，在致密化的同时，利用晶舟上顶板和晶舟下顶板以及支撑立柱之间的焊料同步连接，实现晶舟的高精度制造，熔渗致密‑连接一体化技术在解决基体致密的同时，实现了晶舟上顶板和晶舟下顶板以及支撑立柱的连接，而且不会产生较大变形，是一种非常理想的大尺寸碳化硅晶舟制造技术。
Preparation method of high-purity silicon carbide large-size wafer boat
高纯碳化硅大尺寸晶舟的制备方法
REN YUN (Autor:in) / HAO YAN (Autor:in) / ZHOU KUN (Autor:in) / LIU CHANGCHUN (Autor:in) / ZHAO YABIN (Autor:in)
23.07.2024
Patent
Elektronische Ressource
Chinesisch
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