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Indium cerium oxide target as well as preparation method and application thereof
The invention belongs to the technical field of oxide targets, and particularly discloses an indium cerium oxide target as well as a preparation method and application thereof. The preparation raw materials of the cerium indium oxide target material comprise indium oxide, cerium oxide, tantalum oxide and aluminum oxide, and further comprise a dispersing agent and a binding agent. By doping a proper amount of cerium oxide, tantalum oxide and aluminum oxide into an indium oxide matrix, the sintering density of the target material is improved, air holes between grain boundaries are eliminated, the resistivity of the target material is remarkably reduced, the carrier density is improved, and the performance of the target material is optimized. The invention also provides a preparation method and application of the indium cerium oxide target material.
本发明属于氧化物靶材技术领域,具体公开了一种氧化铟铈靶材及其制备方法和应用。本发明的氧化铟铈靶材的制备原料包括氧化铟、氧化铈、氧化钽和氧化铝,还包括分散剂和粘结剂。本发明通过在氧化铟基体中掺入适量的氧化铈、氧化钽和氧化铝,提高了靶材的烧结致密度,消除晶界间的气孔,并显著降低了靶材的电阻率,提高了载流子密度,优化靶材性能。本发明还提供该氧化铟铈靶材的制备方法和应用。
Indium cerium oxide target as well as preparation method and application thereof
The invention belongs to the technical field of oxide targets, and particularly discloses an indium cerium oxide target as well as a preparation method and application thereof. The preparation raw materials of the cerium indium oxide target material comprise indium oxide, cerium oxide, tantalum oxide and aluminum oxide, and further comprise a dispersing agent and a binding agent. By doping a proper amount of cerium oxide, tantalum oxide and aluminum oxide into an indium oxide matrix, the sintering density of the target material is improved, air holes between grain boundaries are eliminated, the resistivity of the target material is remarkably reduced, the carrier density is improved, and the performance of the target material is optimized. The invention also provides a preparation method and application of the indium cerium oxide target material.
本发明属于氧化物靶材技术领域,具体公开了一种氧化铟铈靶材及其制备方法和应用。本发明的氧化铟铈靶材的制备原料包括氧化铟、氧化铈、氧化钽和氧化铝,还包括分散剂和粘结剂。本发明通过在氧化铟基体中掺入适量的氧化铈、氧化钽和氧化铝,提高了靶材的烧结致密度,消除晶界间的气孔,并显著降低了靶材的电阻率,提高了载流子密度,优化靶材性能。本发明还提供该氧化铟铈靶材的制备方法和应用。
Indium cerium oxide target as well as preparation method and application thereof
一种氧化铟铈靶材及其制备方法和应用
WANG LIANGLI (Autor:in) / GE CHUNQIAO (Autor:in) / CHEN LU (Autor:in) / GAO YANG (Autor:in)
06.09.2024
Patent
Elektronische Ressource
Chinesisch
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