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Preparation method of flexible Hastelloy alloy substrate multi-layer structure anti-ferroelectric film
The invention discloses a preparation method of a flexible Hastelloy substrate multilayer structure anti-ferroelectric film, and relates to the technical field of flexible electronic material preparation processes, the process method comprises the following specific steps: S100, pretreatment of a Hastelloy substrate: cutting the Hastelloy substrate into a proper size, carrying out ultrasonic cleaning by using absolute ethyl alcohol and deionized water, and drying to obtain the Hastelloy substrate; according to the method, the lanthanum strontium cobaltate (LSCO) buffer layer is introduced between the flexible hastelloy substrate and the lead lanthanum zirconate titanate (PLZT) film, so that lattice mismatch and thermal expansion mismatch between the film and the substrate are effectively reduced, and the surface wettability of the flexible hastelloy substrate is improved. The buffer layer can relieve stress caused by the difference between lattice constants and thermal expansion coefficients of materials, so that defects such as cracks and dislocation in the film are reduced, and the overall performance and stability of the film are improved.
本发明公开了一种柔性哈氏合金衬底多层结构反铁电薄膜的制备方法，涉及柔性电子材料制备工艺技术领域，该工艺方法的具体步骤为：S100，哈氏合金衬底的预处理：将哈氏合金衬底裁剪成合适的尺寸，用无水乙醇和去离子水超声清洗，烘干后放入马弗炉中进行热处理，改善其表面浸润性，本发明通过在柔性哈氏合金衬底与锆钛酸铅镧(PLZT)薄膜之间引入钴酸镧锶(LSCO)缓冲层，该方法有效地降低了薄膜与衬底之间的晶格失配和热膨胀失配，这种缓冲层能够缓解由于材料间晶格常数和热膨胀系数差异引起的应力，从而减少薄膜内部的缺陷，如裂纹和位错，提高了薄膜的整体性能和稳定性。
Preparation method of flexible Hastelloy alloy substrate multi-layer structure anti-ferroelectric film
The invention discloses a preparation method of a flexible Hastelloy substrate multilayer structure anti-ferroelectric film, and relates to the technical field of flexible electronic material preparation processes, the process method comprises the following specific steps: S100, pretreatment of a Hastelloy substrate: cutting the Hastelloy substrate into a proper size, carrying out ultrasonic cleaning by using absolute ethyl alcohol and deionized water, and drying to obtain the Hastelloy substrate; according to the method, the lanthanum strontium cobaltate (LSCO) buffer layer is introduced between the flexible hastelloy substrate and the lead lanthanum zirconate titanate (PLZT) film, so that lattice mismatch and thermal expansion mismatch between the film and the substrate are effectively reduced, and the surface wettability of the flexible hastelloy substrate is improved. The buffer layer can relieve stress caused by the difference between lattice constants and thermal expansion coefficients of materials, so that defects such as cracks and dislocation in the film are reduced, and the overall performance and stability of the film are improved.
本发明公开了一种柔性哈氏合金衬底多层结构反铁电薄膜的制备方法，涉及柔性电子材料制备工艺技术领域，该工艺方法的具体步骤为：S100，哈氏合金衬底的预处理：将哈氏合金衬底裁剪成合适的尺寸，用无水乙醇和去离子水超声清洗，烘干后放入马弗炉中进行热处理，改善其表面浸润性，本发明通过在柔性哈氏合金衬底与锆钛酸铅镧(PLZT)薄膜之间引入钴酸镧锶(LSCO)缓冲层，该方法有效地降低了薄膜与衬底之间的晶格失配和热膨胀失配，这种缓冲层能够缓解由于材料间晶格常数和热膨胀系数差异引起的应力，从而减少薄膜内部的缺陷，如裂纹和位错，提高了薄膜的整体性能和稳定性。
Preparation method of flexible Hastelloy alloy substrate multi-layer structure anti-ferroelectric film
一种柔性哈氏合金衬底多层结构反铁电薄膜的制备方法
CHENG JINRONG (Autor:in) / WANG PENGFEI (Autor:in)
06.09.2024
Patent
Elektronische Ressource
Chinesisch
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