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Sputtering target, method for producing sputtering target, oxide thin film, thin film transistor, and electronic device
A sputtering target is provided with an oxide sintered body containing indium oxide as a main component. The oxide sintered body has a hydrogen content of 5 * 1016 atoms/cm3 or more, an atomic concentration ratio of an I n (indium) element to an O (oxygen) element (O element/I n element) of 1.3 or more and less than 2.5, and a density of 6.0 g/cm3 or more as measured by the Archimedes method.
一种溅射靶，是具备包含氧化铟作为主成分的氧化物烧结体的溅射靶。所述氧化物烧结体的含氢浓度为5×1016atoms/cm3以上，I n(铟)元素与O(氧)元素的原子浓度比(O元素/I n元素)为1.3以上且小于2.5，通过阿基米德法测量的所述氧化物烧结体的密度为6.0g/cm3以上。
Sputtering target, method for producing sputtering target, oxide thin film, thin film transistor, and electronic device
A sputtering target is provided with an oxide sintered body containing indium oxide as a main component. The oxide sintered body has a hydrogen content of 5 * 1016 atoms/cm3 or more, an atomic concentration ratio of an I n (indium) element to an O (oxygen) element (O element/I n element) of 1.3 or more and less than 2.5, and a density of 6.0 g/cm3 or more as measured by the Archimedes method.
一种溅射靶，是具备包含氧化铟作为主成分的氧化物烧结体的溅射靶。所述氧化物烧结体的含氢浓度为5×1016atoms/cm3以上，I n(铟)元素与O(氧)元素的原子浓度比(O元素/I n元素)为1.3以上且小于2.5，通过阿基米德法测量的所述氧化物烧结体的密度为6.0g/cm3以上。
Sputtering target, method for producing sputtering target, oxide thin film, thin film transistor, and electronic device
溅射靶、溅射靶的制造方法、氧化物薄膜、薄膜晶体管及电子设备
SASAKI DAICHI (Autor:in) / KAIJO AKIRA (Autor:in) / OYAMA MASASHI (Autor:in) / KAWASHIMA EMI (Autor:in)
08.11.2024
Patent
Elektronische Ressource
Chinesisch
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