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Sputtering target, oxide semiconductor thin film, thin film transistor, and electronic device
A sputtering target provided with an oxide sintered compact including a spinel structure compound containing indium element (In), tin element (Sn), zinc element (Zn), an element X, and oxygen, the atomic ratios of the elements satisfying formula (1), and the spinel structure compound furthermore being represented by the formula Zn2SnO4. (1): 0.001 <= X/(In + Sn + Zn + X) <= 0.05. (In formula (1),In, Zn, Sn, and X represent the amounts of indium element, zinc element, tin element, and element X, respectively, contained in the oxide sintered compact. Element X is at least one species selected from Ge, Si, Y, Zr, Al, Mg, Yb, and Ga.)
一种溅射靶，其特征在于，具备氧化物烧结体，该氧化物烧结体含有铟元素(In)、锡元素(Sn)、锌元素(Zn)、X元素以及氧，各元素的原子比满足下述式(1)，该氧化物烧结体还包含以ZnSnO表示的尖晶石结构化合物。0.001≦X/(In+Sn+Zn+X)≦0.05…(1)式(1)中，In、Zn、Sn以及X分别表示氧化物烧结体中的铟元素、锌元素、锡元素以及X元素的含量,X元素选自Ge、Si、Y、Zr、Al、Mg、Yb以及Ga中的至少一种以上。
Sputtering target, oxide semiconductor thin film, thin film transistor, and electronic device
A sputtering target provided with an oxide sintered compact including a spinel structure compound containing indium element (In), tin element (Sn), zinc element (Zn), an element X, and oxygen, the atomic ratios of the elements satisfying formula (1), and the spinel structure compound furthermore being represented by the formula Zn2SnO4. (1): 0.001 <= X/(In + Sn + Zn + X) <= 0.05. (In formula (1),In, Zn, Sn, and X represent the amounts of indium element, zinc element, tin element, and element X, respectively, contained in the oxide sintered compact. Element X is at least one species selected from Ge, Si, Y, Zr, Al, Mg, Yb, and Ga.)
一种溅射靶，其特征在于，具备氧化物烧结体，该氧化物烧结体含有铟元素(In)、锡元素(Sn)、锌元素(Zn)、X元素以及氧，各元素的原子比满足下述式(1)，该氧化物烧结体还包含以ZnSnO表示的尖晶石结构化合物。0.001≦X/(In+Sn+Zn+X)≦0.05…(1)式(1)中，In、Zn、Sn以及X分别表示氧化物烧结体中的铟元素、锌元素、锡元素以及X元素的含量,X元素选自Ge、Si、Y、Zr、Al、Mg、Yb以及Ga中的至少一种以上。
Sputtering target, oxide semiconductor thin film, thin film transistor, and electronic device
溅射靶、氧化物半导体薄膜、薄膜晶体管以及电子设备
OYAMA MASASHI (Autor:in) / ITOSE MAMI (Autor:in)
17.04.2020
Patent
Elektronische Ressource
Chinesisch
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