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Ferroelectric film material and preparation method and application thereof
The embodiment of the invention relates to a ferroelectric film material and a preparation method and application thereof, the chemical general formula of the ferroelectric film material is (1-x) Na < 0.5 > Bi < 0.5 > TiO < 3-x > Bi (Mg < 0.5 > Zr < 0.5 >) O < 3 >, and x is less than or equal to 0.3. By controlling the range of x to be larger than 0 and smaller than or equal to 0.3, the domain structure in the ferroelectric film material can become fuzzy, the long-range ferroelectric domain can be broken, then the polarization conversion potential barrier is reduced, the polarization lag is reduced, the residual polarization value and the coercive field of the ferroelectric film material are reduced, and therefore the energy storage density and the energy storage efficiency of the ferroelectric film material can be effectively improved.
本申请实施例涉及一种铁电膜材料及其制备方法和应用,铁电膜材料的化学通式为(1‑x)Na0.5Bi0.5TiO3‑xBi(Mg0.5Zr0.5)O3,其中,0
Ferroelectric film material and preparation method and application thereof
The embodiment of the invention relates to a ferroelectric film material and a preparation method and application thereof, the chemical general formula of the ferroelectric film material is (1-x) Na < 0.5 > Bi < 0.5 > TiO < 3-x > Bi (Mg < 0.5 > Zr < 0.5 >) O < 3 >, and x is less than or equal to 0.3. By controlling the range of x to be larger than 0 and smaller than or equal to 0.3, the domain structure in the ferroelectric film material can become fuzzy, the long-range ferroelectric domain can be broken, then the polarization conversion potential barrier is reduced, the polarization lag is reduced, the residual polarization value and the coercive field of the ferroelectric film material are reduced, and therefore the energy storage density and the energy storage efficiency of the ferroelectric film material can be effectively improved.
本申请实施例涉及一种铁电膜材料及其制备方法和应用,铁电膜材料的化学通式为(1‑x)Na0.5Bi0.5TiO3‑xBi(Mg0.5Zr0.5)O3,其中,0
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