Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Anti-ferroelectric material, preparation method thereof and thin film capacitor
The invention provides an anti-ferroelectric material, a preparation method thereof and a thin film capacitor, the chemical formula of the anti-ferroelectric material is Pb1-xSrxZrO3, and x is more than or equal to 0.4 and less than or equal to 0.6; the antiferroelectric material has the characteristic that dipoles are arranged disorderly. According to the technical scheme of the invention, the dipoles near the phase interface of the antiferroelectric material are completely disordered in arrangement, and the disordered dipole arrangement can effectively reduce lattice distortion of antiferroelectric PbZrO3, reduce defect density, effectively inhibit leakage current and reduce dielectric loss, and greatly improve the intrinsic breakdown field of the thin film. A thin film capacitor prepared from the antiferroelectric material has higher breakdown field strength (the highest breakdown field strength can reach 6.5 MV/cm), energy storage density and efficiency, the maximum energy storage density can reach 125 J/cm < 3 >, and the efficiency is 83%.
本发明提供了一种反铁电材料及其制备方法、薄膜电容器，该反铁电材料的化学式为Pb1‑xSrxZrO3，其中0.4≤x≤0.6；所述反铁电材料具有偶极子无序排列特征。本发明的技术方案的反铁电材料相界面附近的偶极子排列完全无序，这种混乱的偶极子排布能够有效降低反铁电PbZrO3的晶格畸变，减少缺陷密度，能够有效抑制漏电流和减小介电损耗，极大地提高薄膜的本征击穿场。采用该反铁电材料制备的薄膜电容器，具有更高的击穿场强(最高可达6.5MV/cm)、储能密度与效率，最大储能密度可达125J/cm3，效率为83％。
Anti-ferroelectric material, preparation method thereof and thin film capacitor
The invention provides an anti-ferroelectric material, a preparation method thereof and a thin film capacitor, the chemical formula of the anti-ferroelectric material is Pb1-xSrxZrO3, and x is more than or equal to 0.4 and less than or equal to 0.6; the antiferroelectric material has the characteristic that dipoles are arranged disorderly. According to the technical scheme of the invention, the dipoles near the phase interface of the antiferroelectric material are completely disordered in arrangement, and the disordered dipole arrangement can effectively reduce lattice distortion of antiferroelectric PbZrO3, reduce defect density, effectively inhibit leakage current and reduce dielectric loss, and greatly improve the intrinsic breakdown field of the thin film. A thin film capacitor prepared from the antiferroelectric material has higher breakdown field strength (the highest breakdown field strength can reach 6.5 MV/cm), energy storage density and efficiency, the maximum energy storage density can reach 125 J/cm < 3 >, and the efficiency is 83%.
本发明提供了一种反铁电材料及其制备方法、薄膜电容器，该反铁电材料的化学式为Pb1‑xSrxZrO3，其中0.4≤x≤0.6；所述反铁电材料具有偶极子无序排列特征。本发明的技术方案的反铁电材料相界面附近的偶极子排列完全无序，这种混乱的偶极子排布能够有效降低反铁电PbZrO3的晶格畸变，减少缺陷密度，能够有效抑制漏电流和减小介电损耗，极大地提高薄膜的本征击穿场。采用该反铁电材料制备的薄膜电容器，具有更高的击穿场强(最高可达6.5MV/cm)、储能密度与效率，最大储能密度可达125J/cm3，效率为83％。
Anti-ferroelectric material, preparation method thereof and thin film capacitor
一种反铁电材料及其制备方法、薄膜电容器
CHEN ZUHUANG (Autor:in) / LI YIJIE (Autor:in) / SI YANGYANG (Autor:in)
07.05.2024
Patent
Elektronische Ressource
Chinesisch
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