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Lead-free piezoelectric ceramic material and preparation method thereof
The invention discloses a lead-free piezoelectric ceramic material and a preparation method thereof, the chemical general formula of the lead-free piezoelectric ceramic material is (0.96-x) K < 0.48 > Na < 0.52 > Nb < 0.98 > Sb < 0.02-0.04 > Bi < 0.5 > Na < 0.5 > ZrO < 3-x > Bi < 0.5 > Ag < 0.5 > ZrO < 3 >, x is greater than or equal to 0.005 and less than or equal to 0.03, and y is greater than or equal to 0.05 and less than or equal to 0.03. The content of the Ag element in the ceramic material is 0.15-0.87 wt%; according to the ceramic material, a compound Bi0. 5Ag0. 5ZrO3 is introduced on the basis of KNNS-BNZ-based ceramic to regulate and control a piezoelectric ceramic structure, so that phase transformation temperatures TR-O and TO-T are transferred to room temperature, and a three-phase coexistence phase boundary of a nanoscale trigonal phase (R)-orthorhombic phase (O)-tetragonal phase (T) is constructed in a room temperature region.
本发明公开了一种无铅压电陶瓷材料及其制备方法,所述无铅压电陶瓷材料的化学通式为:(0.96‑x)K0.48Na0.52Nb0.98Sb0.02‑0.04Bi0.5Na0.5ZrO3‑xBi0.5Ag0.5ZrO3,其中,0.005≤x≤0.03;在该陶瓷材料中Ag元素含量为0.15~0.87wt%;该陶瓷材料在KNNS‑BNZ基陶瓷的基础上引入化合物Bi0.5Ag0.5ZrO3,来调控压电陶瓷结构,使相转变温度TR‑O和TO‑T转移至室温,在室温区域构建了纳米级三方相(R)‑正交相(O)‑四方相(T)三相共存相界。
Lead-free piezoelectric ceramic material and preparation method thereof
The invention discloses a lead-free piezoelectric ceramic material and a preparation method thereof, the chemical general formula of the lead-free piezoelectric ceramic material is (0.96-x) K < 0.48 > Na < 0.52 > Nb < 0.98 > Sb < 0.02-0.04 > Bi < 0.5 > Na < 0.5 > ZrO < 3-x > Bi < 0.5 > Ag < 0.5 > ZrO < 3 >, x is greater than or equal to 0.005 and less than or equal to 0.03, and y is greater than or equal to 0.05 and less than or equal to 0.03. The content of the Ag element in the ceramic material is 0.15-0.87 wt%; according to the ceramic material, a compound Bi0. 5Ag0. 5ZrO3 is introduced on the basis of KNNS-BNZ-based ceramic to regulate and control a piezoelectric ceramic structure, so that phase transformation temperatures TR-O and TO-T are transferred to room temperature, and a three-phase coexistence phase boundary of a nanoscale trigonal phase (R)-orthorhombic phase (O)-tetragonal phase (T) is constructed in a room temperature region.
本发明公开了一种无铅压电陶瓷材料及其制备方法,所述无铅压电陶瓷材料的化学通式为:(0.96‑x)K0.48Na0.52Nb0.98Sb0.02‑0.04Bi0.5Na0.5ZrO3‑xBi0.5Ag0.5ZrO3,其中,0.005≤x≤0.03;在该陶瓷材料中Ag元素含量为0.15~0.87wt%;该陶瓷材料在KNNS‑BNZ基陶瓷的基础上引入化合物Bi0.5Ag0.5ZrO3,来调控压电陶瓷结构,使相转变温度TR‑O和TO‑T转移至室温,在室温区域构建了纳米级三方相(R)‑正交相(O)‑四方相(T)三相共存相界。
Lead-free piezoelectric ceramic material and preparation method thereof
一种无铅压电陶瓷材料及其制备方法
DONG CHAO (Autor:in) / GUO HAI (Autor:in) / YAN TINGNAN (Autor:in) / NIE MIN (Autor:in)
10.12.2024
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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