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Bonding type diamond cooling fin and preparation method thereof
The invention belongs to the technical field of diamond radiating materials, and particularly discloses a bonding type diamond radiating fin and a preparation method thereof.The bonding type diamond radiating fin is prepared by the steps that a synthetic block is loaded into a cubic press, a segmented boosting technology is adopted for machining, silicon powder and silicon carbide micro powder in each layer are melted, single crystal diamond in the layers is bonded, and the bonding type diamond radiating fin is obtained; the silicon powder reacts with carbon atoms on the surface of the diamond single crystal to generate silicon carbide, the silicon micro-powder has the effect of reducing the melting point of the silicon carbide, the diamond cooling fin completely composed of the silicon carbide and the diamond can be generated by controlling the proper proportion of the diamond single crystal, the silicon powder and the silicon carbide micro-powder, and the diamond cooling fin has the excellent performance that the heat conductivity is close to that of the single crystal; the content of diamond in the diamond cooling fin can reach 75%-95%, and the heat conductivity can reach 800 w/(m.k)-1600 w/(m.k) at the normal temperature and is 2-4 times that of pure copper 386.4 w/(m.k).
本发明属于金刚石散热材料技术领域,具体公开了一种粘结型金刚石散热片及其制备方法,将合成块装入六面顶压机,采用分段升压工艺进行加工,每一层内部的硅粉和碳化硅微粉融化,将层内的单晶金刚石粘结起来,硅粉和金刚石单晶表面的碳原子反应,生成碳化硅,硅微粉有降低碳化硅熔点的作用,通过控制合适的金刚石单晶、硅粉和碳化硅微粉比例,可以生成完全有碳化硅和金刚石构成的金刚石散热片,具有热导率接近单晶的优异性能;金刚石散热片中金刚石含量可以达到75%~95%,常温下热导率可以达到800w/(m.k)~1600w/(m.k),是纯铜386.4w/(m.k)的2~4倍。
Bonding type diamond cooling fin and preparation method thereof
The invention belongs to the technical field of diamond radiating materials, and particularly discloses a bonding type diamond radiating fin and a preparation method thereof.The bonding type diamond radiating fin is prepared by the steps that a synthetic block is loaded into a cubic press, a segmented boosting technology is adopted for machining, silicon powder and silicon carbide micro powder in each layer are melted, single crystal diamond in the layers is bonded, and the bonding type diamond radiating fin is obtained; the silicon powder reacts with carbon atoms on the surface of the diamond single crystal to generate silicon carbide, the silicon micro-powder has the effect of reducing the melting point of the silicon carbide, the diamond cooling fin completely composed of the silicon carbide and the diamond can be generated by controlling the proper proportion of the diamond single crystal, the silicon powder and the silicon carbide micro-powder, and the diamond cooling fin has the excellent performance that the heat conductivity is close to that of the single crystal; the content of diamond in the diamond cooling fin can reach 75%-95%, and the heat conductivity can reach 800 w/(m.k)-1600 w/(m.k) at the normal temperature and is 2-4 times that of pure copper 386.4 w/(m.k).
本发明属于金刚石散热材料技术领域,具体公开了一种粘结型金刚石散热片及其制备方法,将合成块装入六面顶压机,采用分段升压工艺进行加工,每一层内部的硅粉和碳化硅微粉融化,将层内的单晶金刚石粘结起来,硅粉和金刚石单晶表面的碳原子反应,生成碳化硅,硅微粉有降低碳化硅熔点的作用,通过控制合适的金刚石单晶、硅粉和碳化硅微粉比例,可以生成完全有碳化硅和金刚石构成的金刚石散热片,具有热导率接近单晶的优异性能;金刚石散热片中金刚石含量可以达到75%~95%,常温下热导率可以达到800w/(m.k)~1600w/(m.k),是纯铜386.4w/(m.k)的2~4倍。
Bonding type diamond cooling fin and preparation method thereof
一种粘结型金刚石散热片及其制备方法
ZHAO RENYU (Autor:in) / ZHAO JUNRAN (Autor:in) / SHI ANJIA (Autor:in) / HUANG CHAORAN (Autor:in) / ZHAO JIANHUI (Autor:in)
10.12.2024
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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