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Method for reducing sintering temperature of MgGa2O4 microwave dielectric ceramic
The invention provides a method for reducing the sintering temperature of MgGa2O4 microwave dielectric ceramics, which comprises the following two steps: (1) carrying out A-site doping on MgGa2O4 by adopting (Li0. 5Bi0. 5) 2 + composite ions, and (2) paving a BaCu (B2O5) and LiF mixture in an aluminum oxide sintering crucible, and sintering at 1000-1250 DEG C to form a sintering-assisting atmosphere. According to the method, the sintering temperature of the MgGa2O4 microwave dielectric ceramic can be reduced to 1000-1250 DEG C from the traditional 1400 DEG C or above. The relative density of the MgGa2O4 microwave dielectric ceramic prepared by the method is greater than 95%, and the dielectric constant of the material measured at the frequency of 14-16 GHz is 6.5-9.5; the Q * f value is in a range of 60000 to 130000 GHz; and the temperature coefficient of resonance frequency is-78 to-10 ppm/DEG C. The method for reducing the sintering temperature of the MgGa2O4 microwave dielectric ceramic is expected to become a new-generation key preparation process in the fields of electronic communication, green processing, environmental protection and the like.
本申请提供了一种降低MgGa2O4微波介质陶瓷烧结温度的方法，该方法包括两个步骤：（1）采用(Li0.5Bi0.5)2+复合离子对MgGa2O4进行A位掺杂，（2）在氧化铝承烧坩埚中内铺BaCu(B2O5)与LiF混合料，在1000~1250℃烧结，形成助烧气氛。通过上述方法可将MgGa2O4微波介质陶瓷的烧结温度从传统的1400℃以上降低至1000~1250℃。采用此方法制备的MgGa2O4微波介质陶瓷的相对密度＞95%，在14~16 GHz频率下测得材料介电常数为6.5~9.5；Q×f值60000~130000GHz；谐振频率温度系数为‑78~‑10ppm/℃。所述的一种降低MgGa2O4微波介质陶瓷烧结温度的方法有望成为新一代电子通讯、绿色加工、环境保护等领域的关键制备工艺。
Method for reducing sintering temperature of MgGa2O4 microwave dielectric ceramic
The invention provides a method for reducing the sintering temperature of MgGa2O4 microwave dielectric ceramics, which comprises the following two steps: (1) carrying out A-site doping on MgGa2O4 by adopting (Li0. 5Bi0. 5) 2 + composite ions, and (2) paving a BaCu (B2O5) and LiF mixture in an aluminum oxide sintering crucible, and sintering at 1000-1250 DEG C to form a sintering-assisting atmosphere. According to the method, the sintering temperature of the MgGa2O4 microwave dielectric ceramic can be reduced to 1000-1250 DEG C from the traditional 1400 DEG C or above. The relative density of the MgGa2O4 microwave dielectric ceramic prepared by the method is greater than 95%, and the dielectric constant of the material measured at the frequency of 14-16 GHz is 6.5-9.5; the Q * f value is in a range of 60000 to 130000 GHz; and the temperature coefficient of resonance frequency is-78 to-10 ppm/DEG C. The method for reducing the sintering temperature of the MgGa2O4 microwave dielectric ceramic is expected to become a new-generation key preparation process in the fields of electronic communication, green processing, environmental protection and the like.
本申请提供了一种降低MgGa2O4微波介质陶瓷烧结温度的方法，该方法包括两个步骤：（1）采用(Li0.5Bi0.5)2+复合离子对MgGa2O4进行A位掺杂，（2）在氧化铝承烧坩埚中内铺BaCu(B2O5)与LiF混合料，在1000~1250℃烧结，形成助烧气氛。通过上述方法可将MgGa2O4微波介质陶瓷的烧结温度从传统的1400℃以上降低至1000~1250℃。采用此方法制备的MgGa2O4微波介质陶瓷的相对密度＞95%，在14~16 GHz频率下测得材料介电常数为6.5~9.5；Q×f值60000~130000GHz；谐振频率温度系数为‑78~‑10ppm/℃。所述的一种降低MgGa2O4微波介质陶瓷烧结温度的方法有望成为新一代电子通讯、绿色加工、环境保护等领域的关键制备工艺。
Method for reducing sintering temperature of MgGa2O4 microwave dielectric ceramic
一种降低MgGa2O4微波介质陶瓷烧结温度的方法
WANG CHENGLONG (Autor:in) / REN LUCHAO (Autor:in) / ZHANG ZIXIN (Autor:in) / LANG ZHAODING (Autor:in) / SHAO PENGCHAO (Autor:in) / LI RUIHANG (Autor:in) / WANG JINGWEN (Autor:in) / ZHANG MINGWEI (Autor:in)
13.12.2024
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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