Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Molybdenum oxide sintered body, sputtering target material, and oxide thin film
The invention provides a molybdenum-based oxide sintered body, a sputtering target material containing the sintered body, and an oxide thin film formed by the sputtering target material. In the present invention, a specific dopant is added to a molybdenum oxide and a niobium oxide that are difficult to sinter in a prescribed content range, and it is possible to simultaneously ensure improved sinterability, high density characteristics, and uniformity, low reflection, and low resistance characteristics of a thin film obtained by controlling particle growth even if pressureless sintering is performed.
本发明提供钼基氧化物烧结体、包含上述烧结体的溅射靶材及由其形成的氧化物薄膜。在本发明中，向难烧结性钼氧化物和铌氧化物以规定含量范围加入特定掺杂剂，即使实施无压烧结也能够同时确保烧结性改善、高密度特性、通过控制粒子生长的薄膜的均匀性、低反射及低电阻特性。
Molybdenum oxide sintered body, sputtering target material, and oxide thin film
The invention provides a molybdenum-based oxide sintered body, a sputtering target material containing the sintered body, and an oxide thin film formed by the sputtering target material. In the present invention, a specific dopant is added to a molybdenum oxide and a niobium oxide that are difficult to sinter in a prescribed content range, and it is possible to simultaneously ensure improved sinterability, high density characteristics, and uniformity, low reflection, and low resistance characteristics of a thin film obtained by controlling particle growth even if pressureless sintering is performed.
本发明提供钼基氧化物烧结体、包含上述烧结体的溅射靶材及由其形成的氧化物薄膜。在本发明中，向难烧结性钼氧化物和铌氧化物以规定含量范围加入特定掺杂剂，即使实施无压烧结也能够同时确保烧结性改善、高密度特性、通过控制粒子生长的薄膜的均匀性、低反射及低电阻特性。
Molybdenum oxide sintered body, sputtering target material, and oxide thin film
钼氧化物烧结体、溅射靶材及氧化物薄膜
ZHANG FENGZHONG (Autor:in) / PARK JAE-SUNG (Autor:in) / LEE HYO-WON (Autor:in) / LI CHENGYI (Autor:in) / HWANG BYEONG JIN (Autor:in) / PARK SANG-YONG (Autor:in) / YUN EUN-SUB (Autor:in) / JIN SEUNG-HYUN (Autor:in) / YANG SEUNG-HO (Autor:in)
13.12.2024
Patent
Elektronische Ressource
Chinesisch
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