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Selenium-germanium-antimony-tellurium-doped phase change target material and preparation method thereof
The invention belongs to the technical field of target material preparation, and discloses a preparation method of a selenium-germanium-antimony-tellurium-doped phase change target material, which comprises the following steps: mixing selenium powder and germanium-antimony-tellurium alloy powder, homogenizing to obtain powder A, carrying out primary sintering on the powder A to obtain an intermediate alloy, crushing and sieving the intermediate alloy to obtain powder B, and finally carrying out secondary sintering on the powder B to obtain the selenium-germanium-antimony-tellurium-doped phase change target material. The secondary sintering is hot pressing sintering, the hot pressing sintering sequentially comprises a first stage, a second stage, a third stage and a fourth stage, the first stage is a pre-pressing stage, the second stage is a first heating and non-pressurization stage, the third stage is a second heating and non-pressurization stage, pressurization is started after the third stage is completed, and the fourth stage is a second heating and non-pressurization stage. By means of the design, the selenium-germanium-antimony-tellurium doped target material has the good density and the good component distribution uniformity degree at the same time, and in addition, the invention further discloses the selenium-germanium-antimony-tellurium doped phase change target material.
本申请属于靶材制备技术领域,公开了一种掺硒锗锑碲相变靶材的制备方法,先将硒粉和锗锑碲合金粉混合、均质,得到粉体A,再将粉体A进行一次烧结得到中间合金,随后将中间合金破碎、过筛,得到粉体B,最后将粉体B进行二次烧结,得到掺硒锗锑碲相变靶材,上述的二次烧结为热压烧结,所述热压烧结依次包括第一阶段、第二阶段、第三阶段、第四阶段,其中第一阶段为预压阶段,第二阶段为第一升温不加压阶段,第三阶段为第二升温不加压阶段,第三阶段完成后开始加压,第四阶段为保温保压阶段,本申请通过上述设计使得掺硒锗锑碲靶材具有良好的密度的同时兼具良好的组分分布均匀程度,此外本申请还公开了一种掺硒锗锑碲相变靶材。
Selenium-germanium-antimony-tellurium-doped phase change target material and preparation method thereof
The invention belongs to the technical field of target material preparation, and discloses a preparation method of a selenium-germanium-antimony-tellurium-doped phase change target material, which comprises the following steps: mixing selenium powder and germanium-antimony-tellurium alloy powder, homogenizing to obtain powder A, carrying out primary sintering on the powder A to obtain an intermediate alloy, crushing and sieving the intermediate alloy to obtain powder B, and finally carrying out secondary sintering on the powder B to obtain the selenium-germanium-antimony-tellurium-doped phase change target material. The secondary sintering is hot pressing sintering, the hot pressing sintering sequentially comprises a first stage, a second stage, a third stage and a fourth stage, the first stage is a pre-pressing stage, the second stage is a first heating and non-pressurization stage, the third stage is a second heating and non-pressurization stage, pressurization is started after the third stage is completed, and the fourth stage is a second heating and non-pressurization stage. By means of the design, the selenium-germanium-antimony-tellurium doped target material has the good density and the good component distribution uniformity degree at the same time, and in addition, the invention further discloses the selenium-germanium-antimony-tellurium doped phase change target material.
本申请属于靶材制备技术领域,公开了一种掺硒锗锑碲相变靶材的制备方法,先将硒粉和锗锑碲合金粉混合、均质,得到粉体A,再将粉体A进行一次烧结得到中间合金,随后将中间合金破碎、过筛,得到粉体B,最后将粉体B进行二次烧结,得到掺硒锗锑碲相变靶材,上述的二次烧结为热压烧结,所述热压烧结依次包括第一阶段、第二阶段、第三阶段、第四阶段,其中第一阶段为预压阶段,第二阶段为第一升温不加压阶段,第三阶段为第二升温不加压阶段,第三阶段完成后开始加压,第四阶段为保温保压阶段,本申请通过上述设计使得掺硒锗锑碲靶材具有良好的密度的同时兼具良好的组分分布均匀程度,此外本申请还公开了一种掺硒锗锑碲相变靶材。
Selenium-germanium-antimony-tellurium-doped phase change target material and preparation method thereof
一种掺硒锗锑碲相变靶材及其制备方法
SHEN WENXING (Autor:in) / XIAO CHONG (Autor:in) / ZHANG SHAOZHEN (Autor:in) / BAI PINGPING (Autor:in)
27.12.2024
Patent
Elektronische Ressource
Chinesisch
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