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Doped oxide target material for solar cell, preparation method of doped oxide target material and film preparation method
The invention relates to the technical field of solar cells, and provides a doped oxide target material for a solar cell, which is prepared by simultaneously carrying out composite doping with high-purity indium oxide according to different proportions by using one or two of wide-band gap elements of Ti, Zn, A < l > and Ga, one or two of high-valence metal elements of Ta, Mn, Zr, W and Mo, and one or two of rare earth elements of La, Nd, Sm, Ce, Pr and Y. On the basis of obtaining a high-density target material, a PVD thin film preparation process is optimized, and a metal oxide thin film with high mobility and high carrier concentration for a solar cell window layer is obtained. Through composite doping of wide-band-gap elements, high-valence elements and rare earth elements in a specific proportion and through the comprehensive effect of different types of doped elements, the carrier concentration is synchronously improved on the basis of improving the mobility of the thin film, and the transmittance is not negatively influenced while the carrier concentration is improved.
本发明涉及领域太阳能电池技术领域，提供了一种太阳能电池用掺杂氧化物靶材，通过使用宽带隙元素T i、Zn、A l、Ga中的一到两种、高价金属元素Ta、Mn、Zr、W、Mo中的一到两种、以及稀土元素La、Nd、Sm、Ce、Pr、Y中的一到两种同时与高纯度氧化铟进行不同比例的复合掺杂，在获得高密度靶材的基础上，优化PVD薄膜制备工艺，获得太阳能电池窗口层用高迁移率、高载流子浓度的金属氧化物薄膜。通过将宽带隙元素、高价元素、以及稀土元素进行特定比例的复合掺杂，通过不同类型掺杂元素的综合作用，在提高薄膜迁移率的基础上同步提高了载流子浓度，还可以实现载流子浓度的提高的同时对透过率不造成负面影响。
Doped oxide target material for solar cell, preparation method of doped oxide target material and film preparation method
The invention relates to the technical field of solar cells, and provides a doped oxide target material for a solar cell, which is prepared by simultaneously carrying out composite doping with high-purity indium oxide according to different proportions by using one or two of wide-band gap elements of Ti, Zn, A < l > and Ga, one or two of high-valence metal elements of Ta, Mn, Zr, W and Mo, and one or two of rare earth elements of La, Nd, Sm, Ce, Pr and Y. On the basis of obtaining a high-density target material, a PVD thin film preparation process is optimized, and a metal oxide thin film with high mobility and high carrier concentration for a solar cell window layer is obtained. Through composite doping of wide-band-gap elements, high-valence elements and rare earth elements in a specific proportion and through the comprehensive effect of different types of doped elements, the carrier concentration is synchronously improved on the basis of improving the mobility of the thin film, and the transmittance is not negatively influenced while the carrier concentration is improved.
本发明涉及领域太阳能电池技术领域，提供了一种太阳能电池用掺杂氧化物靶材，通过使用宽带隙元素T i、Zn、A l、Ga中的一到两种、高价金属元素Ta、Mn、Zr、W、Mo中的一到两种、以及稀土元素La、Nd、Sm、Ce、Pr、Y中的一到两种同时与高纯度氧化铟进行不同比例的复合掺杂，在获得高密度靶材的基础上，优化PVD薄膜制备工艺，获得太阳能电池窗口层用高迁移率、高载流子浓度的金属氧化物薄膜。通过将宽带隙元素、高价元素、以及稀土元素进行特定比例的复合掺杂，通过不同类型掺杂元素的综合作用，在提高薄膜迁移率的基础上同步提高了载流子浓度，还可以实现载流子浓度的提高的同时对透过率不造成负面影响。
Doped oxide target material for solar cell, preparation method of doped oxide target material and film preparation method
太阳能电池用掺杂氧化物靶材及制备方法及薄膜制备方法
ZENG DUNFENG (Autor:in) / WANG ZHIQIANG (Autor:in) / ZENG TAN (Autor:in) / FANG YUE (Autor:in)
03.01.2025
Patent
Elektronische Ressource
Chinesisch
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