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Preparation method of tantalum oxide doped tin oxide target material for RPD film
The preparation method of the tantalum oxide doped tin oxide target material for the RPD thin film disclosed by the embodiment of the invention comprises the following steps: S1, carrying out primary ball-milling mixing on tin oxide, tantalum oxide, a dispersing agent and deionized water according to a set proportion to obtain primary mixed slurry; s2, drying the primary mixed slurry, then crushing the primary mixed slurry into powder, and selecting the powder with the particle size of less than 80-200 meshes; s3, calcining the powder obtained in the step S2, and collecting calcined powder; s4, the calcined powder, a binder, a dispersing agent and deionized water are subjected to second-time ball-milling mixing according to the set proportion, and second-time slurry is obtained; s5, performing spray granulation on the secondary slurry to obtain spherical particle powder; s6, carrying out compression molding on the spherical particle powder to obtain a target material biscuit; s7, performing isostatic pressing on the target material biscuit to obtain a low-density target material biscuit; and S8, sintering the low-density target material biscuit to obtain the tantalum oxide doped tin oxide target material for the RPD thin film.
本发明实施例公开的用于RPD薄膜的氧化钽掺杂氧化锡靶材的制备方法,包括步骤:S1、氧化锡、氧化钽、分散剂、去离子水按照设定比例进行一次球磨混合,得到一次混合浆料;S2、将一次混合浆料烘干,然后粉碎成粉料,选取粒径小于80~200目的粉料;S3、步骤S2得到的粉料进行煅烧处理,收集煅烧粉体;S4、煅烧粉体、粘结剂、分散剂和去离子水按照设定比例进行第二次球磨混合,得到二次浆料;S5、将二次浆料进行喷雾造粒,得到球形颗粒粉体;S6、球形颗粒粉体模压成型,得到靶材素坯;S7、靶材素坯进行等静压压制,得到低密度靶材素坯;S8、低密度靶材素坯进行烧结,得到用于RPD薄膜的氧化钽掺杂氧化锡靶材。
Preparation method of tantalum oxide doped tin oxide target material for RPD film
The preparation method of the tantalum oxide doped tin oxide target material for the RPD thin film disclosed by the embodiment of the invention comprises the following steps: S1, carrying out primary ball-milling mixing on tin oxide, tantalum oxide, a dispersing agent and deionized water according to a set proportion to obtain primary mixed slurry; s2, drying the primary mixed slurry, then crushing the primary mixed slurry into powder, and selecting the powder with the particle size of less than 80-200 meshes; s3, calcining the powder obtained in the step S2, and collecting calcined powder; s4, the calcined powder, a binder, a dispersing agent and deionized water are subjected to second-time ball-milling mixing according to the set proportion, and second-time slurry is obtained; s5, performing spray granulation on the secondary slurry to obtain spherical particle powder; s6, carrying out compression molding on the spherical particle powder to obtain a target material biscuit; s7, performing isostatic pressing on the target material biscuit to obtain a low-density target material biscuit; and S8, sintering the low-density target material biscuit to obtain the tantalum oxide doped tin oxide target material for the RPD thin film.
本发明实施例公开的用于RPD薄膜的氧化钽掺杂氧化锡靶材的制备方法,包括步骤:S1、氧化锡、氧化钽、分散剂、去离子水按照设定比例进行一次球磨混合,得到一次混合浆料;S2、将一次混合浆料烘干,然后粉碎成粉料,选取粒径小于80~200目的粉料;S3、步骤S2得到的粉料进行煅烧处理,收集煅烧粉体;S4、煅烧粉体、粘结剂、分散剂和去离子水按照设定比例进行第二次球磨混合,得到二次浆料;S5、将二次浆料进行喷雾造粒,得到球形颗粒粉体;S6、球形颗粒粉体模压成型,得到靶材素坯;S7、靶材素坯进行等静压压制,得到低密度靶材素坯;S8、低密度靶材素坯进行烧结,得到用于RPD薄膜的氧化钽掺杂氧化锡靶材。
Preparation method of tantalum oxide doped tin oxide target material for RPD film
用于RPD薄膜的氧化钽掺杂氧化锡靶材的制备方法
CHEN JIE (Autor:in) / WANG SHI (Autor:in) / WANG HAILONG (Autor:in) / SUN BENSHUANG (Autor:in) / HE JILIN (Autor:in)
24.05.2024
Patent
Elektronische Ressource
Chinesisch
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