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TARGET OBTAINED FROM AN OXIDE SINTERED BODY
Provided are an oxide sintered body having zinc oxide as a main component and still more containing magnesium, a target obtained by processing the same, a transparent conductive film having excellent chemical resistance and low resistance, obtained by a direct-current sputtering method or an ion plating method by using the same, and a transparent conductive substrate. Provided are an oxide sintered body having zinc oxide and magnesium, wherein the content of magnesium is from 0.02 to 0.30 as atom number ratio of Mg/(Zn+Mg); still more, an oxide sintered body having zinc oxide, magnesium, gallium and/or aluminum, wherein the content of gallium and/or aluminum is over 0 and equal to or lower than 0.09 as atom number ratio of (Ga+A1)/(Zn+Ga+Al), and the content of magnesium is from 0.02 to 0.30 as atom number ratio of Mg/(Zn+ Ga+Al+Mg); a target obtained by processing these oxide sintered bodies; and a transparent conductive film formed on a substrate by a sputtering method or an ion plating method, by using this target.
TARGET OBTAINED FROM AN OXIDE SINTERED BODY
Provided are an oxide sintered body having zinc oxide as a main component and still more containing magnesium, a target obtained by processing the same, a transparent conductive film having excellent chemical resistance and low resistance, obtained by a direct-current sputtering method or an ion plating method by using the same, and a transparent conductive substrate. Provided are an oxide sintered body having zinc oxide and magnesium, wherein the content of magnesium is from 0.02 to 0.30 as atom number ratio of Mg/(Zn+Mg); still more, an oxide sintered body having zinc oxide, magnesium, gallium and/or aluminum, wherein the content of gallium and/or aluminum is over 0 and equal to or lower than 0.09 as atom number ratio of (Ga+A1)/(Zn+Ga+Al), and the content of magnesium is from 0.02 to 0.30 as atom number ratio of Mg/(Zn+ Ga+Al+Mg); a target obtained by processing these oxide sintered bodies; and a transparent conductive film formed on a substrate by a sputtering method or an ion plating method, by using this target.
TARGET OBTAINED FROM AN OXIDE SINTERED BODY
AUS EINEM OXIDSINTERKÖRPER ERHALTENE KATHODE
CIBLE OBTENUE À PARTIR D'UN OBJET EN OXYDE FRITTÉ
NAKAYAMA TOKUYUKI (Autor:in) / ABE YOSHIYUKI (Autor:in)
19.09.2018
Patent
Elektronische Ressource
Englisch
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