Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
SILICON NITRIDE SUBSTRATE, CIRCUIT SUBSTRATE AND ELECTRONIC DEVICE USING SAME
Provided is a silicon nitride substrate capable of enhancing the bond strength when a member made of a metal is bonded to the substrate, and a circuit substrate and an electronic device capable of improving reliability by using the silicon nitride substrate. The silicon nitride substrate 1 comprises a substrate 1a comprising a silicon nitride sintered body, and a plurality of granular bodies 1b containing silicon and integrated to a principal surface of the substrate 1a, wherein a plurality of needle crystals 1c or column crystals 1d comprising mainly silicon nitride are extended from a portion of the granular bodies 1b. A brazing material is applied to a principal surface of the substrate 1a, and a circuit member and a heat radiation member are arranged on the applied brazing material, and bonded by heating. Because of a plurality of granular bodies 1b integrated to the principal surface of the substrate 1a, and a plurality of the needle crystals 1c or the column crystals 1d extended from a portion of the granular bodies 1b, a high anchor effect is produced so that the circuit member and the heat radiation member are firmly bonded to the silicon nitride substrate 1.
SILICON NITRIDE SUBSTRATE, CIRCUIT SUBSTRATE AND ELECTRONIC DEVICE USING SAME
Provided is a silicon nitride substrate capable of enhancing the bond strength when a member made of a metal is bonded to the substrate, and a circuit substrate and an electronic device capable of improving reliability by using the silicon nitride substrate. The silicon nitride substrate 1 comprises a substrate 1a comprising a silicon nitride sintered body, and a plurality of granular bodies 1b containing silicon and integrated to a principal surface of the substrate 1a, wherein a plurality of needle crystals 1c or column crystals 1d comprising mainly silicon nitride are extended from a portion of the granular bodies 1b. A brazing material is applied to a principal surface of the substrate 1a, and a circuit member and a heat radiation member are arranged on the applied brazing material, and bonded by heating. Because of a plurality of granular bodies 1b integrated to the principal surface of the substrate 1a, and a plurality of the needle crystals 1c or the column crystals 1d extended from a portion of the granular bodies 1b, a high anchor effect is produced so that the circuit member and the heat radiation member are firmly bonded to the silicon nitride substrate 1.
SILICON NITRIDE SUBSTRATE, CIRCUIT SUBSTRATE AND ELECTRONIC DEVICE USING SAME
SILICIUMNITRIDSUBSTRAT, SCHALTSUBSTRAT UND ELEKTRONISCHE VORRICHTUNG DAMIT
SUBSTRAT EN NITRURE DE SILICIUM, SUBSTRAT DE CIRCUIT, ET DISPOSITIF ÉLECTRONIQUE LES UTILISANT
ISHIMINE YUUSAKU (Autor:in) / MORIYAMA MASAYUKI (Autor:in) / KOMATSUBARA KENJI (Autor:in)
05.09.2018
Patent
Elektronische Ressource
Englisch
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