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Silicon nitride substrate and silicon nitride circuit substrate
Provided is a silicon nitride substrate comprising a silicon nitride sintered body having silicon nitride crystal grains and a grain boundary phase, the silicon nitride substrate being characterized in that the thickness of the silicon nitride substrate is 0.4 mm or less, and in any cross section or surface of the silicon nitride sintered body, the thickness of the silicon nitride crystal grains is 0.5 mm or less. In silicon nitride crystal grains present in a unit area of 10 [mu] m * 10 [mu] m, the proportion of particles having dislocation defect portions in the crystal grains is 0-20% in terms of the number proportion. Etching resistance can be improved when the substrate is made into a circuit substrate.
本发明提供一种氮化硅基板，其特征在于，其是由具有氮化硅晶粒和晶界相的氮化硅烧结体制成的氮化硅基板，其中，氮化硅基板的板厚为0.4mm以下，在氮化硅烧结体的任意的截面或表面中，在单位面积10μm×10μm中存在的氮化硅晶粒中在晶粒内具有位错缺陷部的粒子的比例以个数比例计为0％～20％。在制成电路基板时能够提高耐蚀刻性。
Silicon nitride substrate and silicon nitride circuit substrate
Provided is a silicon nitride substrate comprising a silicon nitride sintered body having silicon nitride crystal grains and a grain boundary phase, the silicon nitride substrate being characterized in that the thickness of the silicon nitride substrate is 0.4 mm or less, and in any cross section or surface of the silicon nitride sintered body, the thickness of the silicon nitride crystal grains is 0.5 mm or less. In silicon nitride crystal grains present in a unit area of 10 [mu] m * 10 [mu] m, the proportion of particles having dislocation defect portions in the crystal grains is 0-20% in terms of the number proportion. Etching resistance can be improved when the substrate is made into a circuit substrate.
本发明提供一种氮化硅基板，其特征在于，其是由具有氮化硅晶粒和晶界相的氮化硅烧结体制成的氮化硅基板，其中，氮化硅基板的板厚为0.4mm以下，在氮化硅烧结体的任意的截面或表面中，在单位面积10μm×10μm中存在的氮化硅晶粒中在晶粒内具有位错缺陷部的粒子的比例以个数比例计为0％～20％。在制成电路基板时能够提高耐蚀刻性。
Silicon nitride substrate and silicon nitride circuit substrate
氮化硅基板及氮化硅电路基板
AOKI YOSHIYUKI (Autor:in) / FUKASAWA TAKAYUKI (Autor:in) / MOMMA JUN (Autor:in) / IWAI KENTARO (Autor:in)
07.05.2024
Patent
Elektronische Ressource
Chinesisch
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