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SILICON CARBIDE POWDER AND METHOD FOR PRODUCING SAME
Provided is a high-purity silicon carbide powder and its production method enabling mass production of the high-purity silicon carbide powder at low cost in a safe manner. The content of impurities in the silicon carbide powder is 500 ppm or less. The silicon carbide powder can be obtained by heating a raw material for silicon carbide production 1 in an Acheson furnace 4 using a heat generator 2. The raw material for silicon carbide production 1 is prepared by mixing a siliceous raw material and a carbonaceous raw material. The raw material for silicon carbide production 1 contains the siliceous rawmaterial and the carbonaceous rawmaterial at a mixture mole ratio (C/SiO 2 ) of 2.5 to 4.0 and has a content of impurities of 120 ppm or less.
SILICON CARBIDE POWDER AND METHOD FOR PRODUCING SAME
Provided is a high-purity silicon carbide powder and its production method enabling mass production of the high-purity silicon carbide powder at low cost in a safe manner. The content of impurities in the silicon carbide powder is 500 ppm or less. The silicon carbide powder can be obtained by heating a raw material for silicon carbide production 1 in an Acheson furnace 4 using a heat generator 2. The raw material for silicon carbide production 1 is prepared by mixing a siliceous raw material and a carbonaceous raw material. The raw material for silicon carbide production 1 contains the siliceous rawmaterial and the carbonaceous rawmaterial at a mixture mole ratio (C/SiO 2 ) of 2.5 to 4.0 and has a content of impurities of 120 ppm or less.
SILICON CARBIDE POWDER AND METHOD FOR PRODUCING SAME
SILICIUMCARBIDPULVER UND HERSTELLUNGSVERFAHREN DAFÜR
POUDRE DE CARBURE DE SILICIUM ET PROCÉDÉ POUR PRODUIRE CELLE-CI
MASUDA KENTA (Autor:in) / ICHITSUBO KOUKI (Autor:in) / KAWANO KOHEI (Autor:in) / SUZUKI MASAKAZU (Autor:in) / KUMASAKA ATSUSHI (Autor:in) / TANAKA HIDEAKI (Autor:in)
23.08.2023
Patent
Elektronische Ressource
Englisch
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