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SPUTTERING TARGET COMPRISING TUNGSTEN CARBIDE OR TITANIUM CARBIDE
The present invention provides a sputtering target configured from tungsten carbide or titanium carbide, characterized in having a purity of 4N or higher and a density of 98% or higher. Specifically, an object of the present invention is to provide a sputtering target configured from tungsten carbide or titanium carbide, wherein the purity is maintained high, and the target has a high density and a uniform and high hardness and is capable of stable high speed deposition and less generation of particles.
SPUTTERING TARGET COMPRISING TUNGSTEN CARBIDE OR TITANIUM CARBIDE
The present invention provides a sputtering target configured from tungsten carbide or titanium carbide, characterized in having a purity of 4N or higher and a density of 98% or higher. Specifically, an object of the present invention is to provide a sputtering target configured from tungsten carbide or titanium carbide, wherein the purity is maintained high, and the target has a high density and a uniform and high hardness and is capable of stable high speed deposition and less generation of particles.
SPUTTERING TARGET COMPRISING TUNGSTEN CARBIDE OR TITANIUM CARBIDE
SPUTTERING-TARGET MIT WOLFRAMCARBID ODER TITANCARBID
CIBLE DE PULVÉRISATION COMPRENANT DU CARBURE DE TUNGSTÈNE OU DU CARBURE DE TITANE
OHASHI KAZUMASA (Autor:in) / ODA KUNIHIRO (Autor:in)
15.08.2018
Patent
Elektronische Ressource
Englisch
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