A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
SPUTTERING TARGET COMPRISING TUNGSTEN CARBIDE OR TITANIUM CARBIDE
The present invention provides a sputtering target configured from tungsten carbide or titanium carbide, characterized in having a purity of 4N or higher and a density of 98% or higher. Specifically, an object of the present invention is to provide a sputtering target configured from tungsten carbide or titanium carbide, wherein the purity is maintained high, and the target has a high density and a uniform and high hardness and is capable of stable high speed deposition and less generation of particles.
SPUTTERING TARGET COMPRISING TUNGSTEN CARBIDE OR TITANIUM CARBIDE
The present invention provides a sputtering target configured from tungsten carbide or titanium carbide, characterized in having a purity of 4N or higher and a density of 98% or higher. Specifically, an object of the present invention is to provide a sputtering target configured from tungsten carbide or titanium carbide, wherein the purity is maintained high, and the target has a high density and a uniform and high hardness and is capable of stable high speed deposition and less generation of particles.
SPUTTERING TARGET COMPRISING TUNGSTEN CARBIDE OR TITANIUM CARBIDE
SPUTTERING-TARGET MIT WOLFRAMCARBID ODER TITANCARBID
CIBLE DE PULVÉRISATION COMPRENANT DU CARBURE DE TUNGSTÈNE OU DU CARBURE DE TITANE
OHASHI KAZUMASA (author) / ODA KUNIHIRO (author)
2018-08-15
Patent
Electronic Resource
English
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