Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
JOINED BODY, CERAMIC COPPER CIRCUIT SUBSTRATE, AND SEMICONDUCTOR DEVICE
This joined body according to one embodiment comprises a ceramic substrate, a copper plate, and a joining layer disposed at least on one surface of the ceramic substrate to join the ceramic substrate and the copper plate together. The joining layer contains titanium. The joining layer includes a layer in which titanium is a main component. This layer has a first region and a second region, the first region being formed at the interface between the joining layer and the ceramic substrate, and the second region being located between the first region and the copper plate. When the concentrations of titanium in the first region and in the second region, within a region of 200 µm × the thickness of each of the measurement regions, are measured by the EDX, the joined body is characterized by having a ratio M1/M2 of the titanium concentration in the first region, M1 at%, to the titanium concentration in the second region, M2 at%, of 0.1-5.
JOINED BODY, CERAMIC COPPER CIRCUIT SUBSTRATE, AND SEMICONDUCTOR DEVICE
This joined body according to one embodiment comprises a ceramic substrate, a copper plate, and a joining layer disposed at least on one surface of the ceramic substrate to join the ceramic substrate and the copper plate together. The joining layer contains titanium. The joining layer includes a layer in which titanium is a main component. This layer has a first region and a second region, the first region being formed at the interface between the joining layer and the ceramic substrate, and the second region being located between the first region and the copper plate. When the concentrations of titanium in the first region and in the second region, within a region of 200 µm × the thickness of each of the measurement regions, are measured by the EDX, the joined body is characterized by having a ratio M1/M2 of the titanium concentration in the first region, M1 at%, to the titanium concentration in the second region, M2 at%, of 0.1-5.
JOINED BODY, CERAMIC COPPER CIRCUIT SUBSTRATE, AND SEMICONDUCTOR DEVICE
VERBUNDENER KÖRPER, KERAMISCHES KUPFERSCHALTUNGSSUBSTRAT UND HALBLEITERBAUELEMENT
CORPS ASSEMBLÉ, SUBSTRAT DE CIRCUIT CUIVRÉ EN CÉRAMIQUE ET DISPOSITIF À SEMI-CONDUCTEUR
YONETSU MAKI (Autor:in) / SUENAGA SEIICHI (Autor:in) / FUJISAWA SACHIKO (Autor:in) / SANO TAKASHI (Autor:in)
03.07.2024
Patent
Elektronische Ressource
Englisch
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