Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
BONDED BODY, CERAMIC CIRCUIT SUBSTRATE, AND SEMICONDUCTOR DEVICE
A bonded body according to the present embodiment is provided with a ceramic substrate, a copper plate, and a bonding layer. The bonding layer is disposed on at least one surface of the ceramic substrate and bonds the ceramic substrate and the copper plate. The bonding layer includes a Ti reaction layer and a plurality of first alloys. The Ti reaction layer contains titanium nitride or titanium oxide as a main component. The plurality of first alloys are located between the Ti reaction layer and the copper plate. Each of the plurality of first alloys contains at least one selected from a Cu-Sn alloy and a Cu-In alloy. The plurality of first alloys have mutually differing Sn concentrations or In concentrations. The amount of warping can be reduced by using the present embodiment. Furthermore, the speed of heating and the speed of cooling in a joining process can be increased. In the present embodiment, a silicon nitride substrate is suitable as the ceramic substrate.
BONDED BODY, CERAMIC CIRCUIT SUBSTRATE, AND SEMICONDUCTOR DEVICE
A bonded body according to the present embodiment is provided with a ceramic substrate, a copper plate, and a bonding layer. The bonding layer is disposed on at least one surface of the ceramic substrate and bonds the ceramic substrate and the copper plate. The bonding layer includes a Ti reaction layer and a plurality of first alloys. The Ti reaction layer contains titanium nitride or titanium oxide as a main component. The plurality of first alloys are located between the Ti reaction layer and the copper plate. Each of the plurality of first alloys contains at least one selected from a Cu-Sn alloy and a Cu-In alloy. The plurality of first alloys have mutually differing Sn concentrations or In concentrations. The amount of warping can be reduced by using the present embodiment. Furthermore, the speed of heating and the speed of cooling in a joining process can be increased. In the present embodiment, a silicon nitride substrate is suitable as the ceramic substrate.
BONDED BODY, CERAMIC CIRCUIT SUBSTRATE, AND SEMICONDUCTOR DEVICE
VERBUNDENER KÖRPER, KERAMIKSUBSTRAT FÜR EINE SCHALTUNG UND HALBLEITERBAUELEMENT
CORPS COLLÉ, SUBSTRAT DE CIRCUIT EN CÉRAMIQUE ET DISPOSITIF À SEMI-CONDUCTEUR
SUENAGA SEIICHI (Autor:in) / YONETSU MAKI (Autor:in) / FUJISAWA SACHIKO (Autor:in) / MORI YOICHIRO (Autor:in)
16.08.2023
Patent
Elektronische Ressource
Englisch
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