Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
SPUTTERING TARGET AND METHOD FOR FORMING CESIUM TUNGSTEN OXIDE FILM
[Object] Provided is a sputtering target that makes it possible to set nCs/nW(film) expressing a ratio of Cs atoms to W atoms in a cesium tungsten oxide film formed by a sputtering method within such a desired range (0.3 or more to 0.36 or less) that the film can exhibit high transmittance in the visible wavelength region and absorption in the near-infrared wavelength region.[Solution] This target contains Cs and W. When [T-S distance] denotes a distance between the target and a substrate for film formation and P denotes a pressure in an atmosphere during film formation by sputtering and nW denotes the number of W atoms and nCs denotes the number of Cs atoms contained in the target, nCs/nW(T) expressing a ratio of Cs atoms to W atoms in the target satisfies the following (Formula 1) with respect to [T-S distance] and P: 0.09/−0.00161×T−Sdistance+0.00559×P+0.346≤nCs/nWT≤0.13/−0.00161×T−Sdistance+0.00559×P+0.346
SPUTTERING TARGET AND METHOD FOR FORMING CESIUM TUNGSTEN OXIDE FILM
[Object] Provided is a sputtering target that makes it possible to set nCs/nW(film) expressing a ratio of Cs atoms to W atoms in a cesium tungsten oxide film formed by a sputtering method within such a desired range (0.3 or more to 0.36 or less) that the film can exhibit high transmittance in the visible wavelength region and absorption in the near-infrared wavelength region.[Solution] This target contains Cs and W. When [T-S distance] denotes a distance between the target and a substrate for film formation and P denotes a pressure in an atmosphere during film formation by sputtering and nW denotes the number of W atoms and nCs denotes the number of Cs atoms contained in the target, nCs/nW(T) expressing a ratio of Cs atoms to W atoms in the target satisfies the following (Formula 1) with respect to [T-S distance] and P: 0.09/−0.00161×T−Sdistance+0.00559×P+0.346≤nCs/nWT≤0.13/−0.00161×T−Sdistance+0.00559×P+0.346
SPUTTERING TARGET AND METHOD FOR FORMING CESIUM TUNGSTEN OXIDE FILM
SPUTTERTARGET UND VERFAHREN ZUR HERSTELLUNG EINES CÄSIUMWOLFRAMOXIDFILMS
CIBLE DE PULVÉRISATION ET PROCÉDÉ DE FORMATION D'UN FILM D'OXYDE DE CÉSIUM-TUNGSTÈNE
OKAMI HIDEHARU (Autor:in)
10.04.2024
Patent
Elektronische Ressource
Englisch
SPUTTERING TARGET AND METHOD FOR FORMING CESIUM TUNGSTEN OXIDE FILM
| Europäisches Patentamt | 2022
METHOD OF PRODUCING CESIUM TUNGSTEN OXIDE SINTERED BODY AND CESIUM TUNGSTEN OXIDE TARGET
| Europäisches Patentamt | 2020