Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
High density corrosion resistant layer arrangement for electrostatic chucks
The ceramic layer composition comprises at least 90.0 wt% alumina, titania, Zr02, Y2O3, AIN, Si3N4. SiC, or combinations thereof; and a tantalum oxide (Ta2O5) in the range of 0.1 to 10.0 wt% tantalum pentoxide. The composition provides high corrosion resistance/high density electrostatic chuck ceramic layers compatible with semiconductor device manufacturing processes. The high dielectric constant Ta2O5 additive material improves corrosion resistance to halide plasma and increases the density of the layer to thereby inhibiting metal diffusion/migration from an electrode layer of the chuck. The electrode material may comprise Pt, Pd, tungsten, Mo, Nb, Ta or their alloys.
High density corrosion resistant layer arrangement for electrostatic chucks
The ceramic layer composition comprises at least 90.0 wt% alumina, titania, Zr02, Y2O3, AIN, Si3N4. SiC, or combinations thereof; and a tantalum oxide (Ta2O5) in the range of 0.1 to 10.0 wt% tantalum pentoxide. The composition provides high corrosion resistance/high density electrostatic chuck ceramic layers compatible with semiconductor device manufacturing processes. The high dielectric constant Ta2O5 additive material improves corrosion resistance to halide plasma and increases the density of the layer to thereby inhibiting metal diffusion/migration from an electrode layer of the chuck. The electrode material may comprise Pt, Pd, tungsten, Mo, Nb, Ta or their alloys.
High density corrosion resistant layer arrangement for electrostatic chucks
CHENGTSIN LEE (Autor:in)
18.11.2020
Patent
Elektronische Ressource
Englisch
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