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METHOD FOR PRODUCING SILICON NITRIDE SUBSTRATE
PROBLEM TO BE SOLVED: To provide a method for producing a silicon nitride substrate, in which the dense silicon nitride substrate can be produced from a powdery starting material containing silicon powder and it is unnecessary to remove an alternation layer from a formed sintered molded article thereof.SOLUTION: The method for producing the silicon nitride substrate comprises: a powdery starting material preparation step of using the powdery starting material containing silicon powder, 1-7 mol% of rare earth element compounds in terms of oxides thereof and 8-15 mol% of magnesium compounds in terms of oxides thereof when the silicon in the powdery starting material is converted into silicon nitride; a sheet molding step of molding the powdery starting material into a sheet-like shape to obtain a sheet body; a nitridation step of heating the sheet body under a nitrogen atmosphere at 1,200-1,500°C to nitride the silicon contained in the sheet body; and a sintering step of sintering the sheet body containing nitrided silicon under the nitrogen atmosphere.
【課題】ケイ素粉末を含む原料粉末から製造でき、焼結体を形成後に変質層を除去する必要のない緻密な窒化ケイ素基板の製造方法の提供。【解決手段】ケイ素粉末と、希土類元素化合物と、マグネシウム化合物とを含有する原料粉末であって、原料粉末中のケイ素を窒化ケイ素に換算した場合に、希土類元素化合物を酸化物換算で1〜7mol%含有し、マグネシウム化合物を酸化物換算で8〜15mol%含有する原料粉末を準備する原料粉末準備工程と、原料粉末をシート状に成形してシート体を形成するシート成形工程と、シート体を窒素雰囲気中、1200〜1500℃で加熱し、シート体に含まれるケイ素を窒化する窒化工程と、窒化工程を終えたシート体を窒素雰囲気下で焼結する焼結工程と、により窒化ケイ素基板を製造する方法。【選択図】図1
METHOD FOR PRODUCING SILICON NITRIDE SUBSTRATE
PROBLEM TO BE SOLVED: To provide a method for producing a silicon nitride substrate, in which the dense silicon nitride substrate can be produced from a powdery starting material containing silicon powder and it is unnecessary to remove an alternation layer from a formed sintered molded article thereof.SOLUTION: The method for producing the silicon nitride substrate comprises: a powdery starting material preparation step of using the powdery starting material containing silicon powder, 1-7 mol% of rare earth element compounds in terms of oxides thereof and 8-15 mol% of magnesium compounds in terms of oxides thereof when the silicon in the powdery starting material is converted into silicon nitride; a sheet molding step of molding the powdery starting material into a sheet-like shape to obtain a sheet body; a nitridation step of heating the sheet body under a nitrogen atmosphere at 1,200-1,500°C to nitride the silicon contained in the sheet body; and a sintering step of sintering the sheet body containing nitrided silicon under the nitrogen atmosphere.
【課題】ケイ素粉末を含む原料粉末から製造でき、焼結体を形成後に変質層を除去する必要のない緻密な窒化ケイ素基板の製造方法の提供。【解決手段】ケイ素粉末と、希土類元素化合物と、マグネシウム化合物とを含有する原料粉末であって、原料粉末中のケイ素を窒化ケイ素に換算した場合に、希土類元素化合物を酸化物換算で1〜7mol%含有し、マグネシウム化合物を酸化物換算で8〜15mol%含有する原料粉末を準備する原料粉末準備工程と、原料粉末をシート状に成形してシート体を形成するシート成形工程と、シート体を窒素雰囲気中、1200〜1500℃で加熱し、シート体に含まれるケイ素を窒化する窒化工程と、窒化工程を終えたシート体を窒素雰囲気下で焼結する焼結工程と、により窒化ケイ素基板を製造する方法。【選択図】図1
METHOD FOR PRODUCING SILICON NITRIDE SUBSTRATE
窒化ケイ素基板の製造方法
KUSANO MASARU (Autor:in) / TANABE HAJIME (Autor:in) / HIRAO KIYOSHI (Autor:in) / HIUGA HIDEKI (Autor:in) / SHU YU (Autor:in)
12.11.2015
Patent
Elektronische Ressource
Japanisch
Silicon nitride substrate and method for producing silicon nitride substrate
Europäisches Patentamt | 2017
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