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Silicon nitride substrate and method for producing silicon nitride substrate
A silicon nitride substrate including a phase encompassed of silicon nitride particles, and intergranular phase formed from a sintering aid, wherein a separation layer is formed on the surface of a molded body including silicon nitride powder, sintering aid powder, and organic binder, by using a boron nitride paste containing boron nitride powder, organic binder, and organic solvent; the separation layer and molded body are heated; the organic binder is removed from the separation layer and molded body; subsequently molded bodies stacked with a separation layer therebetween, are sintered. Boron nitride paste contains 0.01 to 0.50% by oxygen mass and 0.001 to 0.5% by carbon mass, and c/a is within range of 0.02 to 10.00, where c is oxygen content in the powder of the boron nitride paste, and a carbon content in the degreased separation layer, which includes 0.2 to 3.5 mg/cm2 of hexagonal boron nitride powder.
Silicon nitride substrate and method for producing silicon nitride substrate
A silicon nitride substrate including a phase encompassed of silicon nitride particles, and intergranular phase formed from a sintering aid, wherein a separation layer is formed on the surface of a molded body including silicon nitride powder, sintering aid powder, and organic binder, by using a boron nitride paste containing boron nitride powder, organic binder, and organic solvent; the separation layer and molded body are heated; the organic binder is removed from the separation layer and molded body; subsequently molded bodies stacked with a separation layer therebetween, are sintered. Boron nitride paste contains 0.01 to 0.50% by oxygen mass and 0.001 to 0.5% by carbon mass, and c/a is within range of 0.02 to 10.00, where c is oxygen content in the powder of the boron nitride paste, and a carbon content in the degreased separation layer, which includes 0.2 to 3.5 mg/cm2 of hexagonal boron nitride powder.
Silicon nitride substrate and method for producing silicon nitride substrate
KAGA YOUICHIROU (Autor:in)
16.05.2017
Patent
Elektronische Ressource
Englisch
IPC:
H05K
PRINTED CIRCUITS
,
Gedruckte Schaltungen
/
B32B
LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
,
Schichtkörper, d.h. aus Ebenen oder gewölbten Schichten, z.B. mit zell- oder wabenförmiger Form, aufgebaute Erzeugnisse
/
C04B
Kalk
,
LIME
/
H01L
Halbleiterbauelemente
,
SEMICONDUCTOR DEVICES
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