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TRANSPARENT CONDUCTIVE FILM, TRANSPARENT CONDUCTIVE FILM-ATTACHED SUBSTRATE, AND PRODUCTION METHOD OF TRANSPARENT CONDUCTIVE FILM-ATTACHED SUBSTRATE

IMURA MASAAKI / SAKAMOTO AKIHIKO

PROBLEM TO BE SOLVED: To provide a transparent conductive film in which resistivity and light absorption rate are reduced as much as possible, and to provide a transparent conductive film-attached substrate.SOLUTION: There is provided a transparent conductive film comprising indium oxide tin film in which (carrier mobility)/(carrier concentration) is 2×10cm/V/S or more, and (carrier mobility)×(carrier concentration) is 200×10cm/V/S or more.SELECTED DRAWING: Figure 2

【課題】抵抗率と光吸収率を可及的に低減した透明導電膜や、透明導電膜付き基板を提供する。【解決手段】酸化インジウム錫膜からなる透明導電膜であって、（キャリア移動度）／（キャリア濃度）が、２×１０−２０ｃｍ５／Ｖ／Ｓ以上であり、かつ、（キャリア移動度）×（キャリア濃度）が、２００×１０２０ｃｍ−１／Ｖ／Ｓ以上である。【選択図】図２

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TRANSPARENT CONDUCTIVE FILM, TRANSPARENT CONDUCTIVE FILM-ATTACHED SUBSTRATE, AND PRODUCTION METHOD OF TRANSPARENT CONDUCTIVE FILM-ATTACHED SUBSTRATE

IMURA MASAAKI / SAKAMOTO AKIHIKO

PROBLEM TO BE SOLVED: To provide a transparent conductive film in which resistivity and light absorption rate are reduced as much as possible, and to provide a transparent conductive film-attached substrate.SOLUTION: There is provided a transparent conductive film comprising indium oxide tin film in which (carrier mobility)/(carrier concentration) is 2×10cm/V/S or more, and (carrier mobility)×(carrier concentration) is 200×10cm/V/S or more.SELECTED DRAWING: Figure 2

【課題】抵抗率と光吸収率を可及的に低減した透明導電膜や、透明導電膜付き基板を提供する。【解決手段】酸化インジウム錫膜からなる透明導電膜であって、（キャリア移動度）／（キャリア濃度）が、２×１０−２０ｃｍ５／Ｖ／Ｓ以上であり、かつ、（キャリア移動度）×（キャリア濃度）が、２００×１０２０ｃｍ−１／Ｖ／Ｓ以上である。【選択図】図２

TRANSPARENT CONDUCTIVE FILM, TRANSPARENT CONDUCTIVE FILM-ATTACHED SUBSTRATE, AND PRODUCTION METHOD OF TRANSPARENT CONDUCTIVE FILM-ATTACHED SUBSTRATE

IMURA MASAAKI / SAKAMOTO AKIHIKO

PROBLEM TO BE SOLVED: To provide a transparent conductive film in which resistivity and light absorption rate are reduced as much as possible, and to provide a transparent conductive film-attached substrate.SOLUTION: There is provided a transparent conductive film comprising indium oxide tin film in which (carrier mobility)/(carrier concentration) is 2×10cm/V/S or more, and (carrier mobility)×(carrier concentration) is 200×10cm/V/S or more.SELECTED DRAWING: Figure 2

【課題】抵抗率と光吸収率を可及的に低減した透明導電膜や、透明導電膜付き基板を提供する。【解決手段】酸化インジウム錫膜からなる透明導電膜であって、（キャリア移動度）／（キャリア濃度）が、２×１０−２０ｃｍ５／Ｖ／Ｓ以上であり、かつ、（キャリア移動度）×（キャリア濃度）が、２００×１０２０ｃｍ−１／Ｖ／Ｓ以上である。【選択図】図２

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Titel:

TRANSPARENT CONDUCTIVE FILM, TRANSPARENT CONDUCTIVE FILM-ATTACHED SUBSTRATE, AND PRODUCTION METHOD OF TRANSPARENT CONDUCTIVE FILM-ATTACHED SUBSTRATE

Weitere Titelangaben:

透明導電膜、透明導電膜付き基板および透明導電膜付き基板の製造方法

Beteiligte:

IMURA MASAAKI (Autor:in) / SAKAMOTO AKIHIKO (Autor:in)

Erscheinungsdatum:

29.06.2017

Medientyp:

Patent

Format:

Elektronische Ressource

Sprache:

Japanisch

Klassifikation:

IPC: C23C Beschichten metallischer Werkstoffe , COATING METALLIC MATERIAL / C04B Kalk , LIME / H01B CABLES , Kabel

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