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ASSEMBLY, POWER MODULE SUBSTRATE, METHOD FOR MANUFACTURING ASSEMBLY, AND METHOD FOR MANUFACTURING POWER MODULE SUBSTRATE
PROBLEM TO BE SOLVED: To provide: an assembly in which a ceramic member and a Cu member are bonded to each other adequately, and which is low in heat resistance in a laminating direction; a power module substrate; a method for manufacturing the assembly; and a method for manufacturing the power module substrate.SOLUTION: An assembly comprises: a ceramic member 11 made of a ceramic; and a Cu member 12 made of Cu or a Cu alloy. The assembly further comprises the following formed at a junction interface of the ceramic member 11 and the Cu member 12: a Cu-Sn-layer 14 located on the side of the ceramic member 11, and having Sn dissolving in Cu; a first intermetallic compound layer 16 located on the side of the Cu member 12, and including Cu and Ti; and a second intermetallic compound layer 17 located between the first intermetallic compound layer 16 and the Cu-Sn-layer 14, and including P and Ti.SELECTED DRAWING: Figure 3
【課題】セラミックス部材とCu部材とが良好に接合され、かつ、積層方向の熱抵抗が低い接合体、パワーモジュール用基板、及び、この接合体の製造方法、パワーモジュール用基板の製造方法を提供する。【解決手段】セラミックスからなるセラミックス部材11とCu又はCu合金からなるCu部材12との接合体であって、セラミックス部材11とCu部材12との接合界面には、セラミックス部材11側に位置し、SnがCu中に固溶したCu−Sn層14と、Cu部材12側に位置し、CuとTiを含有する第1金属間化合物層16と、第1金属間化合物層16とCu−Sn層14との間に位置し、PとTiを含有する第2金属間化合物層17と、が形成されている。【選択図】図3
ASSEMBLY, POWER MODULE SUBSTRATE, METHOD FOR MANUFACTURING ASSEMBLY, AND METHOD FOR MANUFACTURING POWER MODULE SUBSTRATE
PROBLEM TO BE SOLVED: To provide: an assembly in which a ceramic member and a Cu member are bonded to each other adequately, and which is low in heat resistance in a laminating direction; a power module substrate; a method for manufacturing the assembly; and a method for manufacturing the power module substrate.SOLUTION: An assembly comprises: a ceramic member 11 made of a ceramic; and a Cu member 12 made of Cu or a Cu alloy. The assembly further comprises the following formed at a junction interface of the ceramic member 11 and the Cu member 12: a Cu-Sn-layer 14 located on the side of the ceramic member 11, and having Sn dissolving in Cu; a first intermetallic compound layer 16 located on the side of the Cu member 12, and including Cu and Ti; and a second intermetallic compound layer 17 located between the first intermetallic compound layer 16 and the Cu-Sn-layer 14, and including P and Ti.SELECTED DRAWING: Figure 3
【課題】セラミックス部材とCu部材とが良好に接合され、かつ、積層方向の熱抵抗が低い接合体、パワーモジュール用基板、及び、この接合体の製造方法、パワーモジュール用基板の製造方法を提供する。【解決手段】セラミックスからなるセラミックス部材11とCu又はCu合金からなるCu部材12との接合体であって、セラミックス部材11とCu部材12との接合界面には、セラミックス部材11側に位置し、SnがCu中に固溶したCu−Sn層14と、Cu部材12側に位置し、CuとTiを含有する第1金属間化合物層16と、第1金属間化合物層16とCu−Sn層14との間に位置し、PとTiを含有する第2金属間化合物層17と、が形成されている。【選択図】図3
ASSEMBLY, POWER MODULE SUBSTRATE, METHOD FOR MANUFACTURING ASSEMBLY, AND METHOD FOR MANUFACTURING POWER MODULE SUBSTRATE
接合体、パワーモジュール用基板、接合体の製造方法及びパワーモジュール用基板の製造方法
TERASAKI NOBUYUKI (Autor:in) / NAGATOMO YOSHIYUKI (Autor:in)
03.08.2017
Patent
Elektronische Ressource
Japanisch
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