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PRODUCTION METHOD OF CONDUCTIVE SILICON CARBIDE-BASED SINTERED BODY AND CONDUCTIVE SILICON CARBIDE-BASED SINTERED BODY
PROBLEM TO BE SOLVED: To provide a production method of a conductive silicon carbide-based sintered body, with which degradation of mechanical strength and thermal shock resistance is suppressed and porosity is increased, and to provide the conductive silicon carbide-based sintered body produced by the production method.SOLUTION: In a production method of a conductive silicon carbide-based sintered body in which a silicon carbide-based conductive phase composed of silicon carbide including a dopant, generated from a silicon source and a carbon source, is made to surround an aggregate and is sintered, by burning a molding molded from a mixed raw material including a silicon carbide-producing raw material including the silicon source and the carbon source and the aggregate, aggregated particles composed of sintered primary particles are used as the aggregate. The conductive silicon carbide-based sintered body obtained by the production method is configured such that the aggregated particles with a primary particle diameter of 0.5 to 5 μm and a secondary particle diameter of 2 to 25 μm are sintered in a state in which they are surrounded by the silicon carbide-based conductive phase composed of particles with particle diameters smaller than the secondary particle diameter of the aggregated particles.SELECTED DRAWING: Figure 3
【課題】機械的強度や耐熱衝撃性の低下を抑えて気孔率を高めることができる導電性炭化珪素質焼結体の製造方法、及び、該製造方法により製造される導電性炭化珪素質焼結体の提供。【解決手段】珪素源及び炭素源を含む炭化珪素生成原料と骨材とを含む混合原料から成形された成形体を焼成することにより、珪素源及び炭素源から生成した炭化珪素がドーパントを含んでいる炭化珪素質導電性相が、骨材を取り囲んで焼結している導電性炭化珪素質焼結体を製造する方法において、骨材として、一次粒子が焼結している凝集粒子を使用する。この製造方法による、一次粒子径が0.5μm〜5μmで、二次粒子径が2μm〜25μmの凝集粒子を、凝集粒子の二次粒子径より粒子径の小さい粒子からなる炭化珪素質導電性相が取り囲んで焼結している構成の導電性炭化珪素質焼結体。【選択図】図3
PRODUCTION METHOD OF CONDUCTIVE SILICON CARBIDE-BASED SINTERED BODY AND CONDUCTIVE SILICON CARBIDE-BASED SINTERED BODY
PROBLEM TO BE SOLVED: To provide a production method of a conductive silicon carbide-based sintered body, with which degradation of mechanical strength and thermal shock resistance is suppressed and porosity is increased, and to provide the conductive silicon carbide-based sintered body produced by the production method.SOLUTION: In a production method of a conductive silicon carbide-based sintered body in which a silicon carbide-based conductive phase composed of silicon carbide including a dopant, generated from a silicon source and a carbon source, is made to surround an aggregate and is sintered, by burning a molding molded from a mixed raw material including a silicon carbide-producing raw material including the silicon source and the carbon source and the aggregate, aggregated particles composed of sintered primary particles are used as the aggregate. The conductive silicon carbide-based sintered body obtained by the production method is configured such that the aggregated particles with a primary particle diameter of 0.5 to 5 μm and a secondary particle diameter of 2 to 25 μm are sintered in a state in which they are surrounded by the silicon carbide-based conductive phase composed of particles with particle diameters smaller than the secondary particle diameter of the aggregated particles.SELECTED DRAWING: Figure 3
【課題】機械的強度や耐熱衝撃性の低下を抑えて気孔率を高めることができる導電性炭化珪素質焼結体の製造方法、及び、該製造方法により製造される導電性炭化珪素質焼結体の提供。【解決手段】珪素源及び炭素源を含む炭化珪素生成原料と骨材とを含む混合原料から成形された成形体を焼成することにより、珪素源及び炭素源から生成した炭化珪素がドーパントを含んでいる炭化珪素質導電性相が、骨材を取り囲んで焼結している導電性炭化珪素質焼結体を製造する方法において、骨材として、一次粒子が焼結している凝集粒子を使用する。この製造方法による、一次粒子径が0.5μm〜5μmで、二次粒子径が2μm〜25μmの凝集粒子を、凝集粒子の二次粒子径より粒子径の小さい粒子からなる炭化珪素質導電性相が取り囲んで焼結している構成の導電性炭化珪素質焼結体。【選択図】図3
PRODUCTION METHOD OF CONDUCTIVE SILICON CARBIDE-BASED SINTERED BODY AND CONDUCTIVE SILICON CARBIDE-BASED SINTERED BODY
導電性炭化珪素質焼結体の製造方法及び導電性炭化珪素質焼結体
SEIKI SUSUMU (Autor:in) / YAMADA TOMOYUKI (Autor:in)
05.10.2017
Patent
Elektronische Ressource
Japanisch
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