Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
MANUFACTURING METHOD OF CONDUCTIVE SILICON CARBIDE SINTERED BODY AND CONDUCTIVE SILICON CARBIDE SINTERED BODY
PROBLEM TO BE SOLVED: To provide a manufacturing method capable of manufacturing a conductive silicon carbide sintered body having a suppressed change in a specific resistance value due to oxidation and decreased temperature dependence of a specific resistance value.SOLUTION: In a manufacturing method of a conductive silicon carbide sintered body, in a sintered body including a conductive phase which is a phase of silicon carbide containing nitrogen as a dopant, a high resistance phase, which is a phase of silicon carbide having a nitrogen concentration lower than the average nitrogen concentration in the conductive phase, is formed at least outside the conductive phase, whereby a sintered body is produced which has a smaller change in a specific resistance value due to oxidation in comparison with a sintered body not having the high resistance phase, and a sintered body is produced which has temperature dependence of a specific resistance value differentiated by the content of β-type silicon carbide in the sintered body.SELECTED DRAWING: Figure 3
【課題】酸化による比抵抗値の変化が抑制されていると共に、比抵抗値の温度依存性が低減されている導電性炭化珪素質焼結体を製造できる製造方法を提供する。【解決手段】製造方法を、ドーパントとして窒素を含む炭化珪素の相である導電性相を含む焼結体において、少なくとも前記導電性相の外側に、前記導電性相における窒素の平均濃度より窒素の濃度が低い炭化珪素の相である高抵抗相を形成することにより、酸化に伴う比抵抗値の変化が前記高抵抗相のない焼結体に比べて小さい焼結体を製造すると共に、焼結体におけるβ型炭化珪素の割合により、比抵抗値の温度依存性を異ならせた焼結体を製造する構成とする。【選択図】図３
MANUFACTURING METHOD OF CONDUCTIVE SILICON CARBIDE SINTERED BODY AND CONDUCTIVE SILICON CARBIDE SINTERED BODY
PROBLEM TO BE SOLVED: To provide a manufacturing method capable of manufacturing a conductive silicon carbide sintered body having a suppressed change in a specific resistance value due to oxidation and decreased temperature dependence of a specific resistance value.SOLUTION: In a manufacturing method of a conductive silicon carbide sintered body, in a sintered body including a conductive phase which is a phase of silicon carbide containing nitrogen as a dopant, a high resistance phase, which is a phase of silicon carbide having a nitrogen concentration lower than the average nitrogen concentration in the conductive phase, is formed at least outside the conductive phase, whereby a sintered body is produced which has a smaller change in a specific resistance value due to oxidation in comparison with a sintered body not having the high resistance phase, and a sintered body is produced which has temperature dependence of a specific resistance value differentiated by the content of β-type silicon carbide in the sintered body.SELECTED DRAWING: Figure 3
【課題】酸化による比抵抗値の変化が抑制されていると共に、比抵抗値の温度依存性が低減されている導電性炭化珪素質焼結体を製造できる製造方法を提供する。【解決手段】製造方法を、ドーパントとして窒素を含む炭化珪素の相である導電性相を含む焼結体において、少なくとも前記導電性相の外側に、前記導電性相における窒素の平均濃度より窒素の濃度が低い炭化珪素の相である高抵抗相を形成することにより、酸化に伴う比抵抗値の変化が前記高抵抗相のない焼結体に比べて小さい焼結体を製造すると共に、焼結体におけるβ型炭化珪素の割合により、比抵抗値の温度依存性を異ならせた焼結体を製造する構成とする。【選択図】図３
MANUFACTURING METHOD OF CONDUCTIVE SILICON CARBIDE SINTERED BODY AND CONDUCTIVE SILICON CARBIDE SINTERED BODY
導電性炭化珪素質焼結体の製造方法及び導電性炭化珪素質焼結体
YAMADA TOMOYUKI (Autor:in) / SEIKI SUSUMU (Autor:in) / TOKUDA KOJIRO (Autor:in)
20.10.2016
Patent
Elektronische Ressource
Japanisch
IPC:
C04B
Kalk
,
LIME
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