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PRODUCTION METHOD OF SILICON CARBIDE SINTERED BODY
PROBLEM TO BE SOLVED: To provide a method of efficiently producing a silicon carbide sintered body in which by-production of free silicon is suppressed.SOLUTION: A production method of a silicon carbide sintered body 20 includes a step of applying laser on a mixed raw material 10 containing metallic silicon powder 11 and carbon powder 13. The metallic silicon powder (average particle size: -40 μm) and graphite powder (average particle size: -5 μm) are weighed so as to be Si:C=1:1 (molar ratio), followed by mixing by use of a ball mill, further followed by tentatively molding the obtained mixed raw material at pressure of 10 MPa with a pellet molding device, still further followed by pressurizing at 245 MPa by an isostatic press to obtain a disc-like compression molded product having a diameter of 10 mm and a thickness of about 1 mm, followed by irradiating while scanning laser of a wavelength of 1064 nm and output of 150 W/cm2 from a light source of a Nd:YAG laser irradiating device on a surface of the compression molded material such that a beam diameter is 2 mm.SELECTED DRAWING: Figure 1
【課題】遊離シリコンの副生が抑制された炭化珪素焼結体を効率よく製造する方法の提供。【解決手段】金属珪素粉末11及び炭素粉末13を含む混合原料10にレーザーを照射する工程を備える、炭化珪素焼結体20の製造方法。金属珪素粉末(平均粒径:〜40μm)と、グラファイト粉末(平均粒径:〜5μm)とを、Si:C=1:1(モル比)となるように秤量し、ボールミルを用いて混合し、次いで、得られた混合原料を、ペレット成形器を用いて、圧力10MPaで仮成形し、更に静水圧プレスにより、圧力245MPaで加圧し、直径10mm及び厚さ約1mmの円板状圧縮成形物を得て、Nd:YAGレーザー照射装置の光源から、波長1064nm、出力150W/cm2のレーザーを、圧縮成形物の表面に対して、ビーム径が2mmとなるように、スキャンさせながら照射することにより、炭化珪素焼結体を製造する方法。【選択図】図1
PRODUCTION METHOD OF SILICON CARBIDE SINTERED BODY
PROBLEM TO BE SOLVED: To provide a method of efficiently producing a silicon carbide sintered body in which by-production of free silicon is suppressed.SOLUTION: A production method of a silicon carbide sintered body 20 includes a step of applying laser on a mixed raw material 10 containing metallic silicon powder 11 and carbon powder 13. The metallic silicon powder (average particle size: -40 μm) and graphite powder (average particle size: -5 μm) are weighed so as to be Si:C=1:1 (molar ratio), followed by mixing by use of a ball mill, further followed by tentatively molding the obtained mixed raw material at pressure of 10 MPa with a pellet molding device, still further followed by pressurizing at 245 MPa by an isostatic press to obtain a disc-like compression molded product having a diameter of 10 mm and a thickness of about 1 mm, followed by irradiating while scanning laser of a wavelength of 1064 nm and output of 150 W/cm2 from a light source of a Nd:YAG laser irradiating device on a surface of the compression molded material such that a beam diameter is 2 mm.SELECTED DRAWING: Figure 1
【課題】遊離シリコンの副生が抑制された炭化珪素焼結体を効率よく製造する方法の提供。【解決手段】金属珪素粉末11及び炭素粉末13を含む混合原料10にレーザーを照射する工程を備える、炭化珪素焼結体20の製造方法。金属珪素粉末(平均粒径:〜40μm)と、グラファイト粉末(平均粒径:〜5μm)とを、Si:C=1:1(モル比)となるように秤量し、ボールミルを用いて混合し、次いで、得られた混合原料を、ペレット成形器を用いて、圧力10MPaで仮成形し、更に静水圧プレスにより、圧力245MPaで加圧し、直径10mm及び厚さ約1mmの円板状圧縮成形物を得て、Nd:YAGレーザー照射装置の光源から、波長1064nm、出力150W/cm2のレーザーを、圧縮成形物の表面に対して、ビーム径が2mmとなるように、スキャンさせながら照射することにより、炭化珪素焼結体を製造する方法。【選択図】図1
PRODUCTION METHOD OF SILICON CARBIDE SINTERED BODY
炭化珪素焼結体の製造方法
SUEHIRO SATOSHI (Autor:in) / KIMURA TEIICHI (Autor:in)
30.08.2018
Patent
Elektronische Ressource
Japanisch
Europäisches Patentamt | 2017
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