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DIELECTRIC THIN FILM, METHOD FOR MANUFACTURING THE SAME, AND THIN FILM CAPACITOR
PROBLEM TO BE SOLVED: To provide a dielectric thin film having a practical value even when formed into a thin film and having desired dielectric properties; a method for manufacturing the dielectric thin film, capable of easily manufacture the dielectric thin film; and a thin film capacitor using the dielectric thin film.SOLUTION: A dielectric thin film 3 has a principal component represented by the general formula {(BaSnCa)TiO} and consists of a polycrystal film including a crystal grain 5 and a crystal grain boundary 6, 0.01≤x≤0.30 and 0≤y≤0.20 are satisfied, and the thickness t of the film is 200 nm or less. The dielectric thin film 3 is manufactured by arranging a first target material using (BaCa)TiO(0≤y≤0.2) as a principal component, a second target material using a Sn compound as a principal component and a substrate in a film deposition chamber and supplying a predetermined gas to the film deposition chamber while applying voltage under a reduced pressure to perform co-sputtering treatment. A thin film capacitor is manufactured using the dielectric thin film 3.SELECTED DRAWING: Figure 2
【課題】薄膜化しても実用的価値を有する所望の誘電特性を備えた誘電体薄膜、この誘電体薄膜を容易に作製することができる誘電体薄膜の製造方法、及びこの誘電体薄膜を使用した薄膜コンデンサを実現する。【解決手段】誘電体薄膜３は、主成分が一般式{（Ｂａ1-x-yＳｎxＣａy）ＴｉＯ３}で表されると共に、結晶粒子５と結晶粒界６とを備えた多結晶膜からなり、０．０１≦ｘ≦０．３０、及び０≦ｙ≦０．２０を満足し、かつ、膜厚ｔが２００ｎｍ以下である。この誘電体薄膜３は、（Ｂａ1-yＣａｙ）ＴｉＯ３（０≦ｙ≦０．２）を主成分とする第１のターゲット物質と、Ｓｎ化合物を主成分とする第２のターゲット物質と、基板とを成膜室に配し、減圧下、電圧を印加しながら所定のガスを前記成膜室に供給して共スパッタリング処理を施して作製する。薄膜コンデンサは、この誘電体薄膜３を使用して作製する。【選択図】図２
DIELECTRIC THIN FILM, METHOD FOR MANUFACTURING THE SAME, AND THIN FILM CAPACITOR
PROBLEM TO BE SOLVED: To provide a dielectric thin film having a practical value even when formed into a thin film and having desired dielectric properties; a method for manufacturing the dielectric thin film, capable of easily manufacture the dielectric thin film; and a thin film capacitor using the dielectric thin film.SOLUTION: A dielectric thin film 3 has a principal component represented by the general formula {(BaSnCa)TiO} and consists of a polycrystal film including a crystal grain 5 and a crystal grain boundary 6, 0.01≤x≤0.30 and 0≤y≤0.20 are satisfied, and the thickness t of the film is 200 nm or less. The dielectric thin film 3 is manufactured by arranging a first target material using (BaCa)TiO(0≤y≤0.2) as a principal component, a second target material using a Sn compound as a principal component and a substrate in a film deposition chamber and supplying a predetermined gas to the film deposition chamber while applying voltage under a reduced pressure to perform co-sputtering treatment. A thin film capacitor is manufactured using the dielectric thin film 3.SELECTED DRAWING: Figure 2
【課題】薄膜化しても実用的価値を有する所望の誘電特性を備えた誘電体薄膜、この誘電体薄膜を容易に作製することができる誘電体薄膜の製造方法、及びこの誘電体薄膜を使用した薄膜コンデンサを実現する。【解決手段】誘電体薄膜３は、主成分が一般式{（Ｂａ1-x-yＳｎxＣａy）ＴｉＯ３}で表されると共に、結晶粒子５と結晶粒界６とを備えた多結晶膜からなり、０．０１≦ｘ≦０．３０、及び０≦ｙ≦０．２０を満足し、かつ、膜厚ｔが２００ｎｍ以下である。この誘電体薄膜３は、（Ｂａ1-yＣａｙ）ＴｉＯ３（０≦ｙ≦０．２）を主成分とする第１のターゲット物質と、Ｓｎ化合物を主成分とする第２のターゲット物質と、基板とを成膜室に配し、減圧下、電圧を印加しながら所定のガスを前記成膜室に供給して共スパッタリング処理を施して作製する。薄膜コンデンサは、この誘電体薄膜３を使用して作製する。【選択図】図２
DIELECTRIC THIN FILM, METHOD FOR MANUFACTURING THE SAME, AND THIN FILM CAPACITOR
誘電体薄膜、誘電体薄膜の製造方法、及び薄膜コンデンサ
SUZUKI SHOICHIRO (Autor:in) / IKEUCHI SHINSUKE (Autor:in)
12.10.2017
Patent
Elektronische Ressource
Japanisch
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