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DIELECTRIC MONOLAYER THIN FILM, CAPACITOR AND SEMICONDUCTOR DEVICE INCLUDING THE SAME, AND METHOD OF FORMING THE DIELECTRIC MONOLAYER THIN FILM
To provide a dielectric monolayer thin film, capacitor and semiconductor device including the same, and method of producing the same.SOLUTION: A dielectric monolayer thin film, a capacitor and a semiconductor device each including the dielectric monolayer thin film, and a method of forming the dielectric monolayer thin film are provided, the dielectric monolayer thin film including an oxide which is represented by Chemical Formula 1 shown below and has a perovskite-type crystal structure, wherein the oxide has a surface chemically bonded with hydrogen. Chemical Formula 1: A2Bn-3CnO3n+1. In Chemical Formula 1, A is a divalent element, B is a monovalent element, C is a pentavalent element, and n is a number from 3 to 8.SELECTED DRAWING: Figure 1
【課題】誘電体単層薄膜、それを含むキャパシタ及び半導体素子、並びにその製造方法を提供する。【解決手段】下記化学式１によって表示され、ペロブスカイト型結晶構造を有する酸化物を含み、該酸化物は、水素と化学結合された表面を有する誘電体単層薄膜、それを含むキャパシタ及び半導体素子とその製造方法が提示される：（化学式１）Ａ２Ｂｎ−３ＣｎＯ３ｎ＋１化学式１で、Ａは、二価元素であり、Ｂは、一価元素であり、Ｃは、五価元素であり、ｎは、３ないし８の数である。【選択図】図１
DIELECTRIC MONOLAYER THIN FILM, CAPACITOR AND SEMICONDUCTOR DEVICE INCLUDING THE SAME, AND METHOD OF FORMING THE DIELECTRIC MONOLAYER THIN FILM
To provide a dielectric monolayer thin film, capacitor and semiconductor device including the same, and method of producing the same.SOLUTION: A dielectric monolayer thin film, a capacitor and a semiconductor device each including the dielectric monolayer thin film, and a method of forming the dielectric monolayer thin film are provided, the dielectric monolayer thin film including an oxide which is represented by Chemical Formula 1 shown below and has a perovskite-type crystal structure, wherein the oxide has a surface chemically bonded with hydrogen. Chemical Formula 1: A2Bn-3CnO3n+1. In Chemical Formula 1, A is a divalent element, B is a monovalent element, C is a pentavalent element, and n is a number from 3 to 8.SELECTED DRAWING: Figure 1
【課題】誘電体単層薄膜、それを含むキャパシタ及び半導体素子、並びにその製造方法を提供する。【解決手段】下記化学式１によって表示され、ペロブスカイト型結晶構造を有する酸化物を含み、該酸化物は、水素と化学結合された表面を有する誘電体単層薄膜、それを含むキャパシタ及び半導体素子とその製造方法が提示される：（化学式１）Ａ２Ｂｎ−３ＣｎＯ３ｎ＋１化学式１で、Ａは、二価元素であり、Ｂは、一価元素であり、Ｃは、五価元素であり、ｎは、３ないし８の数である。【選択図】図１
DIELECTRIC MONOLAYER THIN FILM, CAPACITOR AND SEMICONDUCTOR DEVICE INCLUDING THE SAME, AND METHOD OF FORMING THE DIELECTRIC MONOLAYER THIN FILM
誘電体単層薄膜、それを含むキャパシタ及び半導体素子、並びにその製造方法
KIM HYUNGJUN (Autor:in) / TANIGUCHI TAKAAKI (Autor:in) / SASAKI TAKAYOSHI (Autor:in) / OSADA MINORU (Autor:in) / KWAK CHAN (Autor:in) / KWON YOUNGNAM (Autor:in) / LEE CHANGSOO (Autor:in)
22.04.2021
Patent
Elektronische Ressource
Japanisch
DIELECTRIC THIN FILM, METHOD FOR MANUFACTURING THE SAME, AND THIN FILM CAPACITOR
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