Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
PRODUCTION METHOD OF SILICON NITRIDE SINTERED BODY, SILICON NITRIDE SINTERED BODY, AND HEAT RADIATION SUBSTRATE USING THE SAME
To provide a production method of a silicon nitride sintered body having high thermal conductivity and its silicon nitride sintered body and a heat radiation substrate containing a silicon nitride sintered body.SOLUTION: The silicon nitride sintered body having high thermal conductivity is produced by: (S1) preparing a silicon nitride powder with an oxygen content of 1.5 mass% or under and (S2) filling the silicon nitride powder in a sintering mold and continuously applying, under a pressure of 70 MPa or over, a pulsed direct current having an electrical voltage of 1 V or above and under 10 V and an output current of 500A or above and 40,000A or under to grain clearances of the base powder for sintering the silicon nitride powder.SELECTED DRAWING: Figure 1
【課題】熱伝導率が高い窒化ケイ素焼結体の製造方法及びその窒化ケイ素焼結体並びに、窒化ケイ素焼結体を備えた放熱基板の提供。【解決手段】（Ｓ１）酸素含有量が１．５質量％以下である窒化ケイ素粉末を用意し、（Ｓ２）前記窒化ケイ素粉末を焼結型に充填し、７０ＭＰａ以上で加圧の下で、原料粉末の粒子間隙に、電圧１Ｖ以上１０Ｖ未満、出力電流５００Ａ以上４０，０００Ａ以下のパルス状直流電流を連続印加し、前記窒化ケイ素粉末を焼結することにより、高熱伝導率の窒化ケイ素焼結体を製造できる。【選択図】図１
PRODUCTION METHOD OF SILICON NITRIDE SINTERED BODY, SILICON NITRIDE SINTERED BODY, AND HEAT RADIATION SUBSTRATE USING THE SAME
To provide a production method of a silicon nitride sintered body having high thermal conductivity and its silicon nitride sintered body and a heat radiation substrate containing a silicon nitride sintered body.SOLUTION: The silicon nitride sintered body having high thermal conductivity is produced by: (S1) preparing a silicon nitride powder with an oxygen content of 1.5 mass% or under and (S2) filling the silicon nitride powder in a sintering mold and continuously applying, under a pressure of 70 MPa or over, a pulsed direct current having an electrical voltage of 1 V or above and under 10 V and an output current of 500A or above and 40,000A or under to grain clearances of the base powder for sintering the silicon nitride powder.SELECTED DRAWING: Figure 1
【課題】熱伝導率が高い窒化ケイ素焼結体の製造方法及びその窒化ケイ素焼結体並びに、窒化ケイ素焼結体を備えた放熱基板の提供。【解決手段】（Ｓ１）酸素含有量が１．５質量％以下である窒化ケイ素粉末を用意し、（Ｓ２）前記窒化ケイ素粉末を焼結型に充填し、７０ＭＰａ以上で加圧の下で、原料粉末の粒子間隙に、電圧１Ｖ以上１０Ｖ未満、出力電流５００Ａ以上４０，０００Ａ以下のパルス状直流電流を連続印加し、前記窒化ケイ素粉末を焼結することにより、高熱伝導率の窒化ケイ素焼結体を製造できる。【選択図】図１
PRODUCTION METHOD OF SILICON NITRIDE SINTERED BODY, SILICON NITRIDE SINTERED BODY, AND HEAT RADIATION SUBSTRATE USING THE SAME
窒化ケイ素焼結体の製造方法、窒化ケイ素焼結体及びそれを用いた放熱基板
NARIMATSU EIICHIRO (Autor:in) / KINOSHITA YOSHIHIRO (Autor:in) / KO JUNG MIN (Autor:in)
17.01.2019
Patent
Elektronische Ressource
Japanisch
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