Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
SILICON CARBIDE MEMBER AND MEMBER FOR SEMICONDUCTOR MANUFACTURING DEVICE
To provide an SiC member that has excellent corrosion resistance against plasma, as well as low light transmissivity resulting in easy temperature control and high recognizability by laser beam, and that is suitable for a member for a semiconductor manufacturing device, for example, for a focus ring or a dummy wafer.SOLUTION: A silicon carbide member has: a composition ratio C/Si of greater than 1, which is a ratio of a content of C element to a content of Si element; and a ratio P2/P1 of 0.02 or less, where P1 is a peak intensity at around 794 cmand P2 is a peak intensity at around 1361 cmin Raman spectroscopy.SELECTED DRAWING: Figure 1
【課題】プラズマに対する耐食性に優れるとともに、光透過性が低く温度調整およびレーザ光による認識性が高く、フォーカスリング、ダミーウェハ等の半導体製造装置用部材として好適なＳｉＣ部材。【解決手段】Ｓｉ元素の含有量に対するＣ元素の含有量である組成比Ｃ／Ｓｉが１より大きく、ラマン分光において７９４ｃｍ−１付近のピーク強度をＰ１とし、１３６１ｃｍ−１付近のピーク強度をＰ２としたとき、Ｐ２／Ｐ１の比率が０．０２以下である炭化ケイ素部材。【選択図】図１
SILICON CARBIDE MEMBER AND MEMBER FOR SEMICONDUCTOR MANUFACTURING DEVICE
To provide an SiC member that has excellent corrosion resistance against plasma, as well as low light transmissivity resulting in easy temperature control and high recognizability by laser beam, and that is suitable for a member for a semiconductor manufacturing device, for example, for a focus ring or a dummy wafer.SOLUTION: A silicon carbide member has: a composition ratio C/Si of greater than 1, which is a ratio of a content of C element to a content of Si element; and a ratio P2/P1 of 0.02 or less, where P1 is a peak intensity at around 794 cmand P2 is a peak intensity at around 1361 cmin Raman spectroscopy.SELECTED DRAWING: Figure 1
【課題】プラズマに対する耐食性に優れるとともに、光透過性が低く温度調整およびレーザ光による認識性が高く、フォーカスリング、ダミーウェハ等の半導体製造装置用部材として好適なＳｉＣ部材。【解決手段】Ｓｉ元素の含有量に対するＣ元素の含有量である組成比Ｃ／Ｓｉが１より大きく、ラマン分光において７９４ｃｍ−１付近のピーク強度をＰ１とし、１３６１ｃｍ−１付近のピーク強度をＰ２としたとき、Ｐ２／Ｐ１の比率が０．０２以下である炭化ケイ素部材。【選択図】図１
SILICON CARBIDE MEMBER AND MEMBER FOR SEMICONDUCTOR MANUFACTURING DEVICE
炭化ケイ素部材および半導体製造装置用部材
FUJIE KAZUYUKI (Autor:in) / OGAWA HIROMITSU (Autor:in) / NAKAYAMA TORU (Autor:in) / HIRANO YOSHINORI (Autor:in)
11.07.2019
Patent
Elektronische Ressource
Japanisch
| Europäisches Patentamt | 2015