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Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
RARE-EARTH OXIDE BASED MONOLITHIC CHAMBER MATERIAL
SOLUTION: A solid sintered ceramic article including a solid solution comprising Y2O3 at a concentration of 40 mol% or higher but lower than 99 mol%, ZrO2 at a concentration higher than 0 mol% but lower than 59 mol%, and Al2O3 at a concentration of 1 mol% or higher but lower than 5 mol%.EFFECT: When used in a plasma etching process for semiconductor devices, the solid sintered ceramic article can exhibit sufficient plasma resistance and can be used as a chamber component.SELECTED DRAWING: Figure 2
【解決手段】固体焼結セラミックス物品は、４０モル％〜９９モル％未満のＹ２Ｏ３と、０モル％超〜５９モル％未満のＺｒＯ２と、１モル％〜５モル％未満のＡｌ２Ｏ３とを含む固溶体を含む。【効果】半導体デバイスのプラズマエッチングプロセスで使用された場合、十分な耐プラズマ性を発揮することができ、チャンバコンポーネントとして使用できる。【選択図】図２
RARE-EARTH OXIDE BASED MONOLITHIC CHAMBER MATERIAL
SOLUTION: A solid sintered ceramic article including a solid solution comprising Y2O3 at a concentration of 40 mol% or higher but lower than 99 mol%, ZrO2 at a concentration higher than 0 mol% but lower than 59 mol%, and Al2O3 at a concentration of 1 mol% or higher but lower than 5 mol%.EFFECT: When used in a plasma etching process for semiconductor devices, the solid sintered ceramic article can exhibit sufficient plasma resistance and can be used as a chamber component.SELECTED DRAWING: Figure 2
【解決手段】固体焼結セラミックス物品は、４０モル％〜９９モル％未満のＹ２Ｏ３と、０モル％超〜５９モル％未満のＺｒＯ２と、１モル％〜５モル％未満のＡｌ２Ｏ３とを含む固溶体を含む。【効果】半導体デバイスのプラズマエッチングプロセスで使用された場合、十分な耐プラズマ性を発揮することができ、チャンバコンポーネントとして使用できる。【選択図】図２
RARE-EARTH OXIDE BASED MONOLITHIC CHAMBER MATERIAL
希土類酸化物系モノリシックチャンバ材料
JENNIFER Y SUN (Autor:in) / BIRAJA P KANUNGO (Autor:in)
03.09.2020
Patent
Elektronische Ressource
Japanisch